ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Population Inversion and Low Cooperative Upconversion in Er-doped Silicon-rich Silicon Nitride Waveguide
Cited 11 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
저자
장지수, 김인용, 성건용, 신중훈
발행일
201104
출처
Optics Express, v.19 no.9, pp.8406-8412
ISSN
1094-4087
출판사
Optical Society of America(OSA)
DOI
https://dx.doi.org/10.1364/OE.19.008406
협약과제
10ZC1100, 메가컨버전스 핵심기술 개발, 함호상
초록
Single-mode, strip-loaded silicon-rich silicon nitride (SRSN) waveguide with 11 at.% excess Si and 1.7×1020 cm-3 Er was fabricated and characterized. By using a 350 nm thick SRSN:Er core layer and a 850 nm wide SiO2 strip, a high core-mode overlap of 0.85 and low transmission loss of 2.9 dB/cm is achieved. Population inversion of 0.73-0.75, close to the theoretical maximum, is estimated to have been achieved via 1480 nm resonant pumping, indicating that nearly all doped Er in SRSN are optically active. Analysis of the pump power dependence of Er3+ luminescence intensity and lifetime indicate that the Er cooperative upconversion coefficient in SRSN:Er is as low as 2.1×10-18 cm3/sec. © 2011 Optical Society of America.
KSP 제안 키워드
850 nm, As 2, Cooperative upconversion, Er-doped, Excess Si, Low transmission loss, Luminescence intensity, Optically active, Pump power, Resonant pumping, Silicon nitride waveguide