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X-band High Power SiGe BiCMOS Multi-function Chip for Active Phased Array Radars
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- Authors
- J.C. Jeong, I.B. Yom
- Issue Date
- 2011-05
- Citation
- Electronics Letters, v.47, no.10, pp.618-619
- ISSN
- 0013-5194
- Publisher
- IET
- Language
- English
- Type
- Journal Article
- Abstract
- An X-band high power multi-function chip has been designed and fabricated using 0.25m SiGe BiCMOS technology, for a transmit/receive (T/R) module of phased array radar systems. The high power and wideband performance was achieved by the integrated power amplifiers employing an active bias circuit and a series feedback technique. The fabricated multi-function chip with a compact size of 8.4mm2 (3.5×2.4mm) exhibits a transmit/receive gain of 30/20dB and a P1dB of 18dBm from 8 to 11GHz. © 2011 The Institution of Engineering and Technology.
- KSP Keywords
- Active bias, Compact size, High power, Multi-function chip(MFC), Phased Array Radar, Radar system, SiGe BiCMOS technology, Wideband performance, active phased array, bias circuit, power amplifiers(PAs)