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Characteristics of Schottky Barrier Silicon Nanocluster Floating Gate Flash Memory
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- Authors
- Daeho Son, Jeongho Kim, Kyungsu Lee, Sunghwan Won, Eunkyeom Kim, Tae-Youb Kim, Moongyu Jang, Kyoungwan Park
- Issue Date
- 2011-07
- Citation
- Thin Solid Films, v.519, no.18, pp.6174-6177
- ISSN
- 0040-6090
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- The silicon nanocluster floating gate memory device based on the Schottky barrier metal-oxide-semiconductor field effect transistor (SB-MOSFET) was proposed. The silicon nanoclusters were formed via the digital gas-feeding low pressure chemical vapor deposition. Erbium silicide process was used to form the Schottky junctions at the source/drain. In addition to the SB-MOSFET operation, the program/erase times of the nonvolatile memory device were determined to be 10 ms and 100 ms under the + 18 and - 18 V gate bias conditions, respectively. Maximum memory window was 5.5 V and the charge retention characteristics were maintained with a memory window of 0.5 V at 106 s. © 2011 Elsevier B.V. All rights reserved.
- KSP Keywords
- Barrier Metal, Erbium silicide, Field-effect transistors(FETs), Flash Memory, Floating gate memory, Low pressure chemical vapor deposition, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Non-Volatile Memory(NVM), Nonvolatile memory devices, SB-MOSFET