상세정보
학술지
Characteristics of Schottky Barrier Silicon Nanocluster Floating Gate Flash Memory
- 발행일
- 201107
- 출처
- Thin Solid Films, v.519 no.18, pp.6174-6177
- ISSN
- 0040-6090
- 출판사
- Elsevier
- 협약과제
- 11ZE1100, ETRI 연구역량 강화를 위한 R&D체계 구축 및 Seed형 기술개발을 위한 창의형 연구 사업, 지경용
- 초록
- The silicon nanocluster floating gate memory device based on the Schottky barrier metal-oxide-semiconductor field effect transistor (SB-MOSFET) was proposed. The silicon nanoclusters were formed via the digital gas-feeding low pressure chemical vapor deposition. Erbium silicide process was used to form the Schottky junctions at the source/drain. In addition to the SB-MOSFET operation, the program/erase times of the nonvolatile memory device were determined to be 10 ms and 100 ms under the + 18 and - 18 V gate bias conditions, respectively. Maximum memory window was 5.5 V and the charge retention characteristics were maintained with a memory window of 0.5 V at 106 s. © 2011 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- Barrier Metal, Erbium silicide, Field-effect transistors(FETs), Flash Memory, Floating gate memory, Low pressure chemical vapor deposition, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Non-Volatile Memory(NVM), Nonvolatile memory devices, SB-MOSFET