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학술지 Green Emission of Silicon Quantum Dot Light-emitting Diodes Caused by Enhanced Carrier Injection
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저자
김백현, 권재완, 박성주, Robert F. Davis, 허철, 성건용
발행일
201109
출처
Journal of the Korean Physical Society, v.59 no.3, pp.L2183-L2186
ISSN
0374-4884
출판사
한국물리학회 (KPS)
DOI
https://dx.doi.org/10.3938/jkps.59.2183
협약과제
11ZC1100, 메가컨버전스 핵심기술 개발, 함호상
초록
We have demonstrated green emitting silicon quantum dot (QD) light-emitting diodes (LEDs) using a transparent n-type InGaN doping layer. The current-voltage characteristics have been significantly improved. The intensity of the integrated green electroluminescence has also been increased by 2.54 times compared to that of a reference LED. The enhanced electrical properties and the strong green EL of the QD LED with an InGaN layer are attributed to the excellent carrier injection into the QDs via the transparent InGaN doping layer.
KSP 제안 키워드
Carrier injection, Green emission, Green emitting, InGaN layer, Light-emitting diodes (leds), N-type, Silicon quantum dots, current-voltage characteristics, electrical properties(I-V curve), green electroluminescence, light-emitting diode(LED)