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Journal Article
Green Emission of Silicon Quantum Dot Light-emitting Diodes Caused by Enhanced Carrier Injection
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- Authors
- Baek Hyun Kim, Jae Wan Kwon, Seong-Ju Park, Robert F. Davis, Chul Huh, Gun Yong Sung
- Issue Date
- 2011-09
- Citation
- Journal of the Korean Physical Society, v.59, no.3, pp.L2183-L2186
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Project Code
- 11ZC1100, Mega Convergence Core Technology Development, Ham Ho-Sang
- Abstract
- We have demonstrated green emitting silicon quantum dot (QD) light-emitting diodes (LEDs) using a transparent n-type InGaN doping layer. The current-voltage characteristics have been significantly improved. The intensity of the integrated green electroluminescence has also been increased by 2.54 times compared to that of a reference LED. The enhanced electrical properties and the strong green EL of the QD LED with an InGaN layer are attributed to the excellent carrier injection into the QDs via the transparent InGaN doping layer.
- KSP Keywords
- Carrier injection, Green emission, Green emitting, InGaN layer, Light-emitting diodes (leds), N-type, Silicon quantum dots, current-voltage characteristics, electrical properties(I-V curve), green electroluminescence, light-emitting diode(LED)