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Terahertz Dielectric Response of Ferroelectric BaxSr1-xTiO3 Thin Films
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- Authors
- Seung Beom Kang, Min Hwan Kwak, Muhan Choi, Sungil Kim, Taeyong Kim, Eun Jong Cha, Kwang Yong Kang
- Issue Date
- 2011-11
- Citation
- IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, v.58, no.11, pp.2276-2280
- ISSN
- 0885-3010
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- Terahertz time-domain spectroscopy has been used to investigate the dielectric and optical properties of ferroelectric BaxSr 1-xTiO3 thin films for nominal x-values of 0.4, 0.6, and 0.8 in the frequency range of 0.3 to 2.5 THz. The ferroelectric thin films were deposited at approximately 700 nm thickness on [001] MgO substrate by pulsed laser deposition. The measured complex dielectric and optical constants were compared with the Cole-Cole relaxation model. The results show that the Cole-Cole relaxation model fits well with the data throughout the frequency range and the dielectric relaxation behavior of ferroelectric Ba xSr1-xTiO3 thin films varies with the films compositions. Among the compositions of BaxSr1-xTiO 3 films with different Ba/Sr ratios, Ba0.6Sr 0.4TiO3 has the highest dielectric constants and the shortest dielectric relaxation time. © 2011 IEEE.
- KSP Keywords
- Cole-Cole, Dielectric Constant, Dielectric relaxation behavior, Dielectric response, Frequency Range, MgO substrate, Pulsed-laser deposition(PLD), Relaxation model, dielectric relaxation time, ferroelectric thin film, optical constants