상세정보
학술지
Terahertz Dielectric Response of Ferroelectric BaxSr1-xTiO3 Thin Films
- 발행일
- 201111
- 출처
- IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, v.58 no.11, pp.2276-2280
- ISSN
- 0885-3010
- 출판사
- IEEE
- 협약과제
- 11PR2800, 테라헤르츠대역 전파 환경 및 무선 전송 플랫폼 기술 연구, 정태진
- 초록
- Terahertz time-domain spectroscopy has been used to investigate the dielectric and optical properties of ferroelectric BaxSr 1-xTiO3 thin films for nominal x-values of 0.4, 0.6, and 0.8 in the frequency range of 0.3 to 2.5 THz. The ferroelectric thin films were deposited at approximately 700 nm thickness on [001] MgO substrate by pulsed laser deposition. The measured complex dielectric and optical constants were compared with the Cole-Cole relaxation model. The results show that the Cole-Cole relaxation model fits well with the data throughout the frequency range and the dielectric relaxation behavior of ferroelectric Ba xSr1-xTiO3 thin films varies with the films compositions. Among the compositions of BaxSr1-xTiO 3 films with different Ba/Sr ratios, Ba0.6Sr 0.4TiO3 has the highest dielectric constants and the shortest dielectric relaxation time. © 2011 IEEE.
- KSP 제안 키워드
- Cole-Cole, Dielectric Constant, Dielectric relaxation behavior, Dielectric response, Frequency Range, MgO substrate, Pulsed-laser deposition(PLD), Relaxation model, dielectric relaxation time, ferroelectric thin film, optical constants