상세정보
학술지
Amorphous SiGe:H Thin Film Solar Cells with Light Absorbing Layers of Graded Bandgap Profile
- 발행일
- 201112
- 출처
- Electrochemical and Solid-State Letters, v.15 no.2, pp.B9-B12
- ISSN
- 1099-0062
- 출판사
- Electrochemical Society (ECS)
- 협약과제
- 10MB6100, 광캡쳐 구조 반사방지막 및 조성기울기를 갖는 Si/SiGe 박막 태양전지 기술 개발, 윤선진
- 초록
- Amorphous SiGe:H (a-SiGe:H) single junction solar cells having light absorbing layers with different Ge profiles were fabricated to investigate the effects of the Ge composition profiles on the solar cell performance. The structures of a-SiGe:H layers were characterized by (a) a constant Ge composition (18%), (b) a stepwise Ge composition, (c) a gradually decreased Ge composition profile (18 ~ 0%), and (d) a complex Ge profile, respectively. The cell performances were compared on the bases of current density - voltage characteristics curves and external quantum efficiency. Among the samples, cell (c) with a gradually decreased Ge profile showed the best performance. © 2011 The Electrochemical Society.
- KSP 제안 키워드
- Absorbing layer, Best performance, Composition profile, External Quantum Efficiency, Ge profile, Single junction solar cells, Solar cell performance, Thin film solar cells, a-SiGe:H, characteristics curves, current density