상세정보
학술지
Analysis of the Current-Voltage Curves of a Cu(In,Ga)Se2 Thin-Film Solar Cell Measured at Different Irradiation Conditions
- 발행일
- 201012
- 출처
- Journal of the Optical Society of Korea, v.14 no.4, pp.321-325
- ISSN
- 1226-4776
- 출판사
- Optical Society of America (OSA)
- 협약과제
- 10MB4200, 반응성 스퍼터링을 이용한 CIGS 초박막 고효율 태양전지 기술 개발, 김제하
- 초록
- We analyze the current density - voltage (J - V) curve of a Cu(In,Ga)Se2 (CIGS) thin-film solar cell measured at different irradiation power densities. For the solar-cell sample investigated in this study, the fill factor and power conversion efficiency decreased as the irradiation power density (IPD) increased in the range of 2 to 5 sun. Characteristic parameters of solar cell including the series resistance (rs), the shunt resistance (rsh), the photocurrent density (JL), the saturation current density (Js) of an ideal diode, and the coefficient (Cs) of the diode current due to electron-hole recombination via ionized traps at the p-n interface are determined from a theoretical fit to the experimental data of the J - V curve using a two-diode model. As IPD increased, both rs and rsh decreased, but Cs increased.