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Journal Article
Device Reliability under Electrical Stress and Photo Response of Oxide TFTs
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- Authors
- Sang-Hee Ko Park, Min-Ki Ryu, Sung-Min Yoon, Shinhyuk Yang, Chi-Sun Hwang, Jae-Hong Jeon
- Issue Date
- 2010-10
- Citation
- Journal of the Society for Information Display, v.18, no.10, pp.779-788
- ISSN
- 1071-0922
- Publisher
- Society for Information Display (SID)
- Language
- English
- Type
- Journal Article
- Abstract
- The stability of oxide TFTs has been the main focus of this research and is probably the most crucial requ irement for the successful application to flat-panel displays. Although the high Fermi level of oxide semiconductors makes TFTs basically stable under electrical stress, the device reliability under diverse variations of electrical stress is affected by materials such as active semiconductors and gate insulators, processes for the formation of back/front channels and passivation layers, and device configurations among other things. How these factors affect the device reliability have been investigated and a review of the stability is presented. In addition, several categories of the light instability of oxide TFTs is presented and the origin is discussed. © Copyright 2010 Society for Information Display.
- KSP Keywords
- AND gate, Device reliability, Fermi level, Information display, Oxide TFTs, Photo response, electrical stress, flat panel, gate insulator, oxide semiconductor, passivation layer