상세정보
학술지
Device Reliability under Electrical Stress and Photo Response of Oxide TFTs
- 발행일
- 201010
- 출처
- Journal of the Society for Information Display, v.18 no.10, pp.779-788
- ISSN
- 1071-0922
- 출판사
- Society for Information Display (SID)
- 협약과제
- 10MB3700, 고품위 Plastic AMOLED 원천기술 개발, 유병곤
- 초록
- The stability of oxide TFTs has been the main focus of this research and is probably the most crucial requ irement for the successful application to flat-panel displays. Although the high Fermi level of oxide semiconductors makes TFTs basically stable under electrical stress, the device reliability under diverse variations of electrical stress is affected by materials such as active semiconductors and gate insulators, processes for the formation of back/front channels and passivation layers, and device configurations among other things. How these factors affect the device reliability have been investigated and a review of the stability is presented. In addition, several categories of the light instability of oxide TFTs is presented and the origin is discussed. © Copyright 2010 Society for Information Display.
- KSP 제안 키워드
- AND gate, Device reliability, Fermi level, Flat Panel, Gate insulator, Information Display, Oxide TFTs, Oxide semiconductor, Photo response, electrical stress, passivation layer