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Journal Article
Ohmic Contact to AlGaN/GaN Heterostructures on Sapphire Substrates
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- Authors
- Zin-Sig Kim, Hokyun Ahn, Jong-Won Lim, Eunsoo Nam
- Issue Date
- 2015-03
- Citation
- Journal of the Korean Physical Society, v.66, no.5, pp.779-784
- ISSN
- 0374-4884
- Publisher
- 한국물리학회
- Language
- English
- Type
- Journal Article
- Abstract
- Low ohmic contact resistance and smooth AlGaN/GaN surface morphology were obtained on a 2-inch c-plane sapphire substrate by using stepwise annealing at three different temperatures. Metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness variations of 30 nm/100 nm/30 nm/100 nm (MS1), 15 nm/220 nm/40 nm/50 nm (MS2), 20 nm/120 nm/55 nm/45 nm (MS3), 15 nm/120 nm/40 nm/50 nm (MS5) and 20 nm/200 nm/55 nm/45 nm (MS6) and of Au/Ge/Au/Ge/Pt with thicknesses of 120 nm/60 nm/120 nm/60 nm/85 nm (MS4), respectively. After multi-layer metal stacking, a rapid thermal annealing (RTA) process was applied with a stepwise annealing temperature profile of 400°C for 180 s, 900°C for 30 s and 940°C for 30 s. We obtained a minimum specific contact resistance of ?갷 = 4.3 × 10?닋7 cm2 for MS1, ?갷 = 1.0 × 10?닋4 cm2 for MS2, ?갷 = 3.2 × 10?닋6 cm2 for MS3, ?갷 = 5.4 × 10?닋8 cm2 for MS5 and ?갷 = 1.1 × 10?닋7 cm2 for MS6.
- KSP Keywords
- 20 nm, 40 nm, 5 nm, AlGaN/GaN heterostructure, Annealing temperature, Composite metal, Contact resistance(73.40.Cg), Different temperatures, GaN surface, Ohmic contact resistance, Rapid thermal annealing(RTA)