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Conference Paper
Double-Channel InZnO/AlSnZnInO Thin-Film Transistors with Ultra High Mobility
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- Authors
- Ji Hun Choi, Jong-Heon Yang, Sooji Nam, Hee-Ok Kim, O-Sang Kwon, Eun-Suk Park, Chi-Sun Hwang, Sung Haeng Cho
- Issue Date
- 2015-12
- Citation
- International Display Workshops (IDW) 2015, pp.189-190
- Language
- English
- Type
- Conference Paper
- Abstract
- We report high performance double-channel InZnO/AISnZnInO (IZO/ATZIO) thin-film transistors (TFTs) with inverted staggered back channel etch (BCE) structure. The field-effect mobility (μFE) oxer 50 cm2/Vs was obtained from the structure with 10 nm-IZO channel insertion between gate dielectric and ATZIO layer. Subthreshold slope (SS). turn-on voltage (Von), and on/off ratio were 0.15 V/decade. -1.6 V, and 3 × 109, respectively. The effects of the IZO channel thickness and post-anneal temperature were investigated.
- KSP Keywords
- Anneal temperature, Channel thickness, High performance, Inverted staggered, ON/OFF ratio, Post-anneal, Subthreshold slope(SS), Thin-Film Transistor(TFT), Turn-on voltage, back channel, double-channel