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Journal Article
High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at λ ~155 μm
- Authors
- Jiho Joo, Sanghoon Kim, In Gyoo Kim, Ki-Seok Jang, Gyungock Kim
- Issue Date
- 2010-08
- Citation
- Optics Express, v.18, no.16, pp.16474-16479
- ISSN
- 1094-4087
- Publisher
- Optical Society of America(OSA)
- Language
- English
- Type
- Journal Article
- Abstract
- We present a high-sensitivity photoreceiver based on a verticalillumination-type 100% Ge-on-Si photodetector. The fabricated p-i-n photodetector with a 90 μm-diameter mesa shows the-3 dB bandwidth of 7.7 GHz, and the responsivity of 0.9 A/W at {\\lambda}~1.55 μm, corresponding to the external quantum efficiency of 72%. A TO-can packaged Ge photoreceiver exhibits the sensitivity of-18.5 dBm for a BER of 10-12 at data rate of 10 Gbps. This result proves the capability of a cost-effective 100% Ge-on-Si photoreceiver which can readily replace the III-V counterparts for optical communications. © 2010 Optical Society of America.
- KSP Keywords
- 3-dB bandwidth, External Quantum Efficiency, Ge-on-Si, High Sensitivity, III-V, P-i-n, Si photodetector, TO-CAN, Type 1, cost-effective, data rate
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
