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Journal Article High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at λ ~155 μm
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Authors
Jiho Joo, Sanghoon Kim, In Gyoo Kim, Ki-Seok Jang, Gyungock Kim
Issue Date
2010-08
Citation
Optics Express, v.18, no.16, pp.16474-16479
ISSN
1094-4087
Publisher
Optical Society of America(OSA)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1364/OE.18.016474
Abstract
We present a high-sensitivity photoreceiver based on a verticalillumination-type 100% Ge-on-Si photodetector. The fabricated p-i-n photodetector with a 90 μm-diameter mesa shows the-3 dB bandwidth of 7.7 GHz, and the responsivity of 0.9 A/W at {\\lambda}~1.55 μm, corresponding to the external quantum efficiency of 72%. A TO-can packaged Ge photoreceiver exhibits the sensitivity of-18.5 dBm for a BER of 10-12 at data rate of 10 Gbps. This result proves the capability of a cost-effective 100% Ge-on-Si photoreceiver which can readily replace the III-V counterparts for optical communications. © 2010 Optical Society of America.
KSP Keywords
3-dB bandwidth, External Quantum Efficiency, Ge-on-Si, High Sensitivity, III-V, P-i-n, Si photodetector, TO-CAN, Type 1, cost-effective, data rate
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