상세정보
학술지
High-Sensitivity 10 Gbps Ge-on-Si Photoreceiver Operating at λ ~ 1.55 um
- 발행일
- 201008
- 출처
- Optics Express, v.18 no.16, pp.16474-16479
- ISSN
- 1094-4087
- 출판사
- Optical Society of America(OSA)
- 협약과제
- 10MB1300, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
- 초록
- We present a high-sensitivity photoreceiver based on a verticalillumination-type 100% Ge-on-Si photodetector. The fabricated p-i-n photodetector with a 90 μm-diameter mesa shows the-3 dB bandwidth of 7.7 GHz, and the responsivity of 0.9 A/W at {\\lambda}~1.55 μm, corresponding to the external quantum efficiency of 72%. A TO-can packaged Ge photoreceiver exhibits the sensitivity of-18.5 dBm for a BER of 10-12 at data rate of 10 Gbps. This result proves the capability of a cost-effective 100% Ge-on-Si photoreceiver which can readily replace the III-V counterparts for optical communications. © 2010 Optical Society of America.
- KSP 제안 키워드
- 3-dB bandwidth, External Quantum Efficiency, Ge-on-Si, High Sensitivity, III-V, P-i-n, Si photodetector, TO-CAN, Type 1, cost-effective, data rate