상세정보
학술지
Oxide Semiconductor-Based Flexible Organic/Inorganic Hybrid Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer
- 발행일
- 201603
- 출처
- Journal of Nanoscience and Nanotechnology, v.16 no.3, pp.2752-2755
- ISSN
- 1533-4880
- 출판사
- American Scientific Publishers (ASP)
- 협약과제
- 14MB1400, 미래광고 서비스를 위한 에너지절감형 환경적응 I/O (Input/Output) 플랫폼 기술 개발, 황치선
- 초록
- We demonstrate flexible organic/inorganic hybrid thin-film transistors (TFTs) on a polydimethysiloxane (PDMS) elastomer substrate. The active channel and gate insulator of the hybrid TFT are composed of In-Ga-Zn-O (IGZO) and blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDFTrFE)] with poly(methyl methacrylate) (PMMA), respectively. It has been confirmed that the fabricated TFT display excellent characteristics: the recorded field-effect mobility, sub-threshold voltage swing, and Ion/Ioff ratio were approximately 0.35 cm2 V-1 s-1, 1.5 V/decade, and 104, respectively. These characteristics did not experience any degradation at a bending radius of 15 mm. These results correspond to the first demonstration of a hybrid-type TFT using an organic gate insulator/ oxide semiconducting active channel structure fabricated on PDMS elastomer, and demonstrate the feasibility of a promising device in a flexible electronic system.
- KSP 제안 키워드
- AND gate, Active channel, Bending radius, Channel structure, First Stokes(S1), Gate insulator, Hybrid-type, In-Ga-Zn-O(IGZO), Organic-inorganic hybrid, Oxide semiconductor, PDMS elastomer