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Oxide Semiconductor-Based Flexible Organic/Inorganic Hybrid Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer
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- Authors
- Soon-Won Jung, Jeong-Seon Choi, Jung Ho Park, Jae Bon Koo, Chan Woo Park, Bock Soon Na, Ji-Young Oh, Sang Chul Lim, Sang Seok Lee, Hye Yong Chu
- Issue Date
- 2016-03
- Citation
- Journal of Nanoscience and Nanotechnology, v.16, no.3, pp.2752-2755
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- We demonstrate flexible organic/inorganic hybrid thin-film transistors (TFTs) on a polydimethysiloxane (PDMS) elastomer substrate. The active channel and gate insulator of the hybrid TFT are composed of In-Ga-Zn-O (IGZO) and blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDFTrFE)] with poly(methyl methacrylate) (PMMA), respectively. It has been confirmed that the fabricated TFT display excellent characteristics: the recorded field-effect mobility, sub-threshold voltage swing, and Ion/Ioff ratio were approximately 0.35 cm2 V-1 s-1, 1.5 V/decade, and 104, respectively. These characteristics did not experience any degradation at a bending radius of 15 mm. These results correspond to the first demonstration of a hybrid-type TFT using an organic gate insulator/ oxide semiconducting active channel structure fabricated on PDMS elastomer, and demonstrate the feasibility of a promising device in a flexible electronic system.
- KSP Keywords
- AND gate, Active channel, Bending radius, Channel structure, First Stokes(S1), Hybrid thin film, Hybrid-type, In-Ga-Zn-O, PDMS elastomer, TFT Display, Thin-Film Transistor(TFT)