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A Low Temperature, Solution-Processed Poly(4-vinylphenol), YOx Nanoparticle Composite/Polysilazane Bi-Layer Gate Insulator for ZnO Thin Film Transistor
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- Authors
- Hyeonwoo Shin, Chan-Mo Kang, Hyunsik Chae, Hyun-Gwan Kim, Kyu-Ha Baek, Hyoung Jin Choi, Man-Young Park, Lee-Mi Do, Changhee Lee
- Issue Date
- 2016-03
- Citation
- Journal of Nanoscience and Nanotechnology, v.16, no.3, pp.2632-2636
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- Low temperature, solution-processed metal oxide thin film transistors (MEOTFTs) have been widely investigated for application in low-cost, transparent, and flexible electronics. To enlarge the application area, solution-processed gate insulators (GI) have been investigated in recent years. We investigated the effects of the organic/inorganic bi-layer GI to ZnO thin film transistors (TFTs). PVP, YOx nanoparticle composite, and polysilazane bi-layer showed low leakage current (~10-8 A/cm2 in 2 MV), which are applicable in low temperature processed MEOTFTs. Polysilazane was used as an interlayer between ZnO and PVP, YOx nanoparticle composite as a good charge transport interface with ZnO. By applying the PVP, YOx nanoparticle composite/polysilazane bi-layer structure to ZnO TFTs, we successfully suppressed the off current (Ioff) to ~10-11 and fabricated good MEOTFTs in 180 °C.
- KSP Keywords
- 4-vinylphenol(Poly), Application areas, Bilayer structure, Charge transport, Low leakage current, Low-cost, Metal-oxide(MOX), Nanoparticle composite, Off current, Solution-processed, Thin-Film Transistor(TFT)