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Back-Thinning Process Research and Characteristics Measurement of Thin Sensor
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- Authors
- H.B. Jeon, K.H. Kang, H. Park, Kun-Sik Park
- Issue Date
- 2015-12
- Citation
- Journal of the Korean Physical Society, v.67, no.12, pp.2065-2069
- ISSN
- 0374-4884
- Publisher
- 한국물리학회
- Language
- English
- Type
- Journal Article
- Abstract
- It is important to develop a thin silicon detector using a large silicon wafer to reduce multiple Coulomb scattering and the material budget. A Si-CsI detector in a large acceptance multi-purpose spectrometer (LAMPS) is considered to identify isotopes. The thickness of the first of three silicon sensors in front of the CsI(Tl) crystal is 100 μm. We aim to establish a manufacturing process for thinning using a 6-inch silicon wafer that provides the characteristics of a photodiode. In this paper, we present a back-thinning process of the photodiode, and comparisons of its electrical characteristics and signal-to-noise ratios before and after the thinning process.
- KSP Keywords
- Electrical characteristics, Manufacturing processes, Process research, Signal-to-Noise, Silicon detector, Silicon sensors, Silicon wafer, Thin silicon, coulomb scattering, multi-purpose