상세정보
학술지
Back-Thinning Process Research and Characteristics Measurement of Thin Sensor
- 저자
- 전혜빈, 강국현, 박환배, 박건식
- 발행일
- 201512
- 출처
- Journal of the Korean Physical Society, v.67 no.12, pp.2065-2069
- ISSN
- 0374-4884
- 출판사
- 한국물리학회
- 초록
- It is important to develop a thin silicon detector using a large silicon wafer to reduce multiple Coulomb scattering and the material budget. A Si-CsI detector in a large acceptance multi-purpose spectrometer (LAMPS) is considered to identify isotopes. The thickness of the first of three silicon sensors in front of the CsI(Tl) crystal is 100 μm. We aim to establish a manufacturing process for thinning using a 6-inch silicon wafer that provides the characteristics of a photodiode. In this paper, we present a back-thinning process of the photodiode, and comparisons of its electrical characteristics and signal-to-noise ratios before and after the thinning process.
- KSP 제안 키워드
- Manufacturing processes, Process research, Signal-to-Noise, Silicon detector, Silicon sensors, Silicon wafer, Thin silicon, coulomb scattering, electrical characteristics, multi-purpose