ETRI-Knowledge Sharing Plaform



논문 검색
구분 SCI
연도 ~ 키워드


학술지 Effect of Se Flux on CuIn1-xGaxSe2 Film in Reactive Sputtering Process
Cited 18 time in scopus Download 1 time Share share facebook twitter linkedin kakaostory
박래만, 이호섭, 조대형, 정용덕, 김경현, 이규석, 김제하
Progress in Photovoltaics: Research and Applications, v.20 no.7, pp.899-903
John Wiley & Sons
CuIn 1-xGa xSe 2 (CIGS) thin films were grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker was used to deliver reactive Se molecules. The Cu 0쨌6 Ga 0쨌4 and Cu 0쨌4In 0쨌6 targets were simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on CIGS film deposition were investigated. The CIGS film growth rate decreased, and the surface roughness of a film increased as the Se flux increased. The [112] crystal orientation was dominant, and metallic crystal phases such as Cu 9Ga 4 and Cu 16In 9 in a film were disappearing with increasing Se flux. A solar cell fabricated using a 900-nm CIGS film showed the power conversion efficiency of 8쨌6%, the highest value found in a sub-micron thick CIGS solar cell related to a reactive sputtering process with metallic targets. Copyright © 2011 John Wiley & Sons, Ltd.
KSP 제안 키워드
CIGS film, CIGS solar cell, Conversion efficiency(C.E.), Crystal phases, Film growth rate, Metallic crystal, Metallic targets, Reactive sputtering process, Soda lime glass(SLG), Surface roughness, crystal orientation