상세정보
학술지
Nonvolatile Memory Thin-Film Transistors Using an Organic Ferroelectric Gate Insulator and an Oxide Semiconducting Channel
- 발행일
- 201103
- 출처
- Semiconductor Science and Technology, v.26 no.3, pp.1-25
- ISSN
- 0268-1242
- 출판사
- Institute of Physics (IOP)
- 초록
- Organic-inorganic hybrid-type nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting active channel are a very promising solution to the memory devices having both features of low-cost and high-performance, which are embeddable into the next-generation flexible and transparent electronics. In this paper, we discuss some important issues for this proposed device, such as device structure design, process optimization and memory array integration. Promising feasible applications and remaining technology issues to solve were also discussed. © 2011 IOP Publishing Ltd.
- KSP 제안 키워드
- Active channel, Device structure, Ferroelectric gate, Gate insulator, High performance, Hybrid-type, Low-cost, Memory Array, Next-generation, Non-Volatile Memory(NVM), Organic-inorganic hybrid