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Journal Article
Nonvolatile Memory Thin-Film Transistors Using an Organic Ferroelectric Gate Insulator and an Oxide Semiconducting Channel
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- Authors
- Sung-Min Yoon, Shinhyuk Yang, Chun-Won Byun, Soon-Won Jung, Min-Ki Ryu, Sang-Hee Ko Park, ByeongHoon Kim, Himchan Oh, Chi-Sun Hwang, Byoung-Gon Yu
- Issue Date
- 2011-03
- Citation
- Semiconductor Science and Technology, v.26, no.3, pp.1-25
- ISSN
- 0268-1242
- Publisher
- Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- Organic-inorganic hybrid-type nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting active channel are a very promising solution to the memory devices having both features of low-cost and high-performance, which are embeddable into the next-generation flexible and transparent electronics. In this paper, we discuss some important issues for this proposed device, such as device structure design, process optimization and memory array integration. Promising feasible applications and remaining technology issues to solve were also discussed. © 2011 IOP Publishing Ltd.
- KSP Keywords
- Active channel, Device structure, Ferroelectric gate, Gate insulator, High performance, Hybrid-type, Low-cost, Memory Array, Next-generation, Non-Volatile Memory(NVM), Organic-inorganic hybrid