ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Interface Analysis of Cu(In,Ga)Se2 and ZnS Formed Using Sulfur Thermal Cracker
Cited 9 time in scopus Download 15 time Share share facebook twitter linkedin kakaostory
저자
조대형, 이우정, 위재형, 한원석, 김태건, 김정원, 정용덕
발행일
201604
출처
ETRI Journal, v.38 no.2, pp.265-271
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.16.2515.0031
협약과제
15PB1800, 초경량 유연 CIGS 박막 모듈 공정장비 상용화 기술개발, 정용덕
초록
We analyzed the interface characteristics of Zn-based thin-film buffer layers formed by a sulfur thermal cracker on a Cu(In,Ga)Se2 (CIGS) light-absorber layer. The analyzed Zn-based thin-film buffer layers are processed by a proposed method comprising two processes - Znsputtering and cracker-sulfurization. The processed buffer layers are then suitable to be used in the fabrication of highly efficient CIGS solar cells. Among the various Znbased film thicknesses, an 8 nmthick Zn-based film shows the highest power conversion efficiency for a solar cell. The band alignment of the buffer/CIGS was investigated by measuring the band-gap energies and valence band levels across the depth direction. The conduction band difference between the near surface and interface in the buffer layer enables an efficient electron transport across the junction. We found the origin of the energy band structure by observing the chemical states. The fabricated buffer/CIGS layers have a structurally and chemically distinct interface with little elemental interdiffusion.
키워드
Chalcogenide, Cu(In,Ga)Se 2, Solar cell, Sulfur cracker, Zn-based film
KSP 제안 키워드
Band gap, Buffer layer, CIGS solar cell, Chemical states, Conversion efficiency(C.E.), Electron Transport, Energy band structure, Interface characteristics, Near surface, Surface and interface, absorber layer