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Journal Article
Interface Analysis of Cu(In,Ga)Se2 and ZnS Formed Using Sulfur Thermal Cracker
- Authors
- Dae-Hyung Cho, Woo-Jung Lee, Jae-Hyung Wi, Won Seok Han, Tae Gun Kim, Jeong Won Kim, Yong-Duck Chung
- Issue Date
- 2016-04
- Citation
- ETRI Journal, v.38, no.2, pp.265-271
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- We analyzed the interface characteristics of Zn-based thin-film buffer layers formed by a sulfur thermal cracker on a Cu(In,Ga)Se2 (CIGS) light-absorber layer. The analyzed Zn-based thin-film buffer layers are processed by a proposed method comprising two processes - Znsputtering and cracker-sulfurization. The processed buffer layers are then suitable to be used in the fabrication of highly efficient CIGS solar cells. Among the various Znbased film thicknesses, an 8 nmthick Zn-based film shows the highest power conversion efficiency for a solar cell. The band alignment of the buffer/CIGS was investigated by measuring the band-gap energies and valence band levels across the depth direction. The conduction band difference between the near surface and interface in the buffer layer enables an efficient electron transport across the junction. We found the origin of the energy band structure by observing the chemical states. The fabricated buffer/CIGS layers have a structurally and chemically distinct interface with little elemental interdiffusion.
- KSP Keywords
- CIGS solar cell, Chemical states, Conversion efficiency(C.E.), Electron transport, Energy band structure, Highly efficient, Interface analysis, Interface characteristics, Near surface, Surface and interface, absorber layer