상세정보
학술지
Interface Analysis of Cu(In,Ga)Se2 and ZnS Formed Using Sulfur Thermal Cracker
- 발행일
- 201604
- 출처
- ETRI Journal, v.38 no.2, pp.265-271
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 15PB1800, 초경량 유연 CIGS 박막 모듈 공정장비 상용화 기술개발, 정용덕
- 초록
- We analyzed the interface characteristics of Zn-based thin-film buffer layers formed by a sulfur thermal cracker on a Cu(In,Ga)Se2 (CIGS) light-absorber layer. The analyzed Zn-based thin-film buffer layers are processed by a proposed method comprising two processes - Znsputtering and cracker-sulfurization. The processed buffer layers are then suitable to be used in the fabrication of highly efficient CIGS solar cells. Among the various Znbased film thicknesses, an 8 nmthick Zn-based film shows the highest power conversion efficiency for a solar cell. The band alignment of the buffer/CIGS was investigated by measuring the band-gap energies and valence band levels across the depth direction. The conduction band difference between the near surface and interface in the buffer layer enables an efficient electron transport across the junction. We found the origin of the energy band structure by observing the chemical states. The fabricated buffer/CIGS layers have a structurally and chemically distinct interface with little elemental interdiffusion.
- KSP 제안 키워드
- Band gap, Buffer layer, CIGS solar cell, Chemical states, Conversion efficiency(C.E.), Electron Transport, Energy band structure, Interface characteristics, Near surface, Surface and interface, absorber layer