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Low-temperature, Solution-processed Indium-oxide Thin-film Transistors Fabricated by Using an Ultraviolet-ozone Treatment
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- Authors
- Hoon Kim, Chan-mo Kang, Yeon-Wha Oh, Jin Hwa Ryu, Kyu-Ha Baek, Lee-Mi Do
- Issue Date
- 2016-04
- Citation
- Journal of the Korean Physical Society, v.68, no.8, pp.971-974
- ISSN
- 0374-4884
- Publisher
- 한국물리학회
- Language
- English
- Type
- Journal Article
- Project Code
- 15PC2500, Synthesis of Oxide Semiconductor and Insulator Ink Materials and Process Development for Printed Backplane of Flexible Displays Processed Below 150 ºC, Do Lee-Mi
- Abstract
- For the fabrication of low-temperature solution-processed metal-oxide thin-film transistors (TFTs), alternative annealing processes have recently been studied for reduced fabrication cost and applications to flexible devices. Indium nitrate solution has been proposed as a precursor for the low-temperature solution-processed TFTs. However, due to its high decomposition temperature, achieving a high-performance indium-oxide (In2O3) TFT at temperatures below 200°C is still difficult. In this study, for improved metal-oxide formation in low-temperature solution-processed In2O3 TFT, indium nitrate film was exposed to UV-ozone for 30 min before annealing at 200°C. The smooth scanning electron microscopy (SEM) image of the UV-ozone treated film implies that the indium nitrates are condensed after treatment. In addition, X-ray photoemission spectroscopy (XPS) data suggest that UV-ozone decreases the number of oxygen vacancies and increases the number of metal-oxygen-metal bonds in the indium-oxide films. As a result, high electrical device performance was achieved with an improved Ion/off ratio (~107) and mobility (1.25 cm2V ?닋1s ?닋1).
- KSP Keywords
- After treatment, Decomposition temperature, Electrical devices, High performance, Indium nitrate, Low temperature(LT), Metal-oxide(MOX), Metal-oxygen, Nitrate solutions, Oxide film, Oxide formation