상세정보
학술지
Low-temperature, Solution-processed Indium-oxide Thin-film Transistors Fabricated by Using an Ultraviolet-ozone Treatment
- 발행일
- 201604
- 출처
- Journal of the Korean Physical Society, v.68 no.8, pp.971-974
- ISSN
- 0374-4884
- 출판사
- 한국물리학회
- 협약과제
- 15PC2500, 150ºC이하 인쇄기반 플렉세블 디스플에이 백플레인용 산화물 반도체, 절연체 잉크소재 및 공정 기술 개발, 도이미
- 초록
- For the fabrication of low-temperature solution-processed metal-oxide thin-film transistors (TFTs), alternative annealing processes have recently been studied for reduced fabrication cost and applications to flexible devices. Indium nitrate solution has been proposed as a precursor for the low-temperature solution-processed TFTs. However, due to its high decomposition temperature, achieving a high-performance indium-oxide (In2O3) TFT at temperatures below 200°C is still difficult. In this study, for improved metal-oxide formation in low-temperature solution-processed In2O3 TFT, indium nitrate film was exposed to UV-ozone for 30 min before annealing at 200°C. The smooth scanning electron microscopy (SEM) image of the UV-ozone treated film implies that the indium nitrates are condensed after treatment. In addition, X-ray photoemission spectroscopy (XPS) data suggest that UV-ozone decreases the number of oxygen vacancies and increases the number of metal-oxygen-metal bonds in the indium-oxide films. As a result, high electrical device performance was achieved with an improved Ion/off ratio (~107) and mobility (1.25 cm2V ?닋1s ?닋1).
- KSP 제안 키워드
- After treatment, Decomposition temperature, Electrical devices, High performance, Indium nitrate, Low temperature(LT), Metal-oxide(MOX), Metal-oxygen, Nitrate solutions, Oxide film, Oxide formation