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High-Performance, Solution-Processed Indium-Oxide TFTs Using Rapid Flash Lamp Annealing
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- Authors
- Chan-mo Kang, Hoon Kim, Yeon-Wha Oh, Kyu-Ha Baek, Lee-Mi Do
- Issue Date
- 2016-05
- Citation
- IEEE Electron Device Letters, v.37, no.5, pp.595-598
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- In this letter, we discuss the temperature distribution of light-illuminated Si substrates with time and the successful fabrication of high-performance, solution-processed indium-oxide thin-film transistors within an annealing time of 2 min using a high-power flash lamp under ambient conditions. The precursor films are completely converted into oxide films within 30 s using flash lamp annealing (FLA). As a result, we obtained the high performance of indium-oxide TFTs with the mobility of impressive 38.9 cm2V-1s-1 with the on/off ratio of ~ 104 for the irradiation time of 2 min and the mobility of 10.3 cm2V-1s-1 with the on/off ratio of ~ 5 × 106 for the irradiation time of 10 s for three times, which is the highest mobility ever reported using FLA. This result will be helpful for breaking the barrier in the mass production of the next-generation semiconductors.
- KSP Keywords
- Annealing time, First Stokes(S1), High performance, High power, Irradiation time, Next-generation, ON/OFF ratio, Oxide TFTs, Oxide film, Precursor film, Si substrate