상세정보
학술지
High-Performance, Solution-Processed Indium-Oxide TFTs Using Rapid Flash Lamp Annealing
- 발행일
- 201605
- 출처
- IEEE Electron Device Letters, v.37 no.5, pp.595-598
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 15PC2500, 150ºC이하 인쇄기반 플렉세블 디스플에이 백플레인용 산화물 반도체, 절연체 잉크소재 및 공정 기술 개발, 도이미
- 초록
- In this letter, we discuss the temperature distribution of light-illuminated Si substrates with time and the successful fabrication of high-performance, solution-processed indium-oxide thin-film transistors within an annealing time of 2 min using a high-power flash lamp under ambient conditions. The precursor films are completely converted into oxide films within 30 s using flash lamp annealing (FLA). As a result, we obtained the high performance of indium-oxide TFTs with the mobility of impressive 38.9 cm2V-1s-1 with the on/off ratio of ~ 104 for the irradiation time of 2 min and the mobility of 10.3 cm2V-1s-1 with the on/off ratio of ~ 5 × 106 for the irradiation time of 10 s for three times, which is the highest mobility ever reported using FLA. This result will be helpful for breaking the barrier in the mass production of the next-generation semiconductors.
- KSP 제안 키워드
- Annealing time, First Stokes(S1), Flash lamp annealing(FLA), High performance, High power, Irradiation time, Next-generation, Oxide TFTs, Oxide film, Precursor film, Si substrate