상세정보
학술지
Modeling of Amorphous InGaZnO Thin Film Transistors using an Empirical Mobility Function based on the Exponential Deep and Tail States
- 발행일
- 201203
- 출처
- Thin Solid Films, v.520 no.10, pp.3800-3802
- ISSN
- 0040-6090
- 출판사
- Elsevier
- 협약과제
- 10MB6800, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, 정우석
- 초록
- We demonstrate that the voltage-dependent average mobility of In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) can be excellently fitted by an empirical mobility function based on the exponential density of deep and tail states. The proposed mobility function needs only 5 parameters and does not need the concept of the threshold voltage which is inherently ambiguous in amorphous oxide TFTs. Both the transfer and output curves of the device are well reproduced by integrating the mobility function. © 2011 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- Amorphous InGaZnO thin film, Amorphous oxide, In-Ga-Zn-O(IGZO), Oxide TFTs, Thin-Film Transistor(TFT), tail states, thin film(TF), threshold voltage(Vth), voltage-dependent