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Journal Article Modeling of Amorphous InGaZnO Thin Film Transistors using an Empirical Mobility Function based on the Exponential Deep and Tail States
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Authors
Jae-Heon Shin, Woo-Seok Cheong, Chi-Sun Hwang, Sung Mook Chung
Issue Date
2012-03
Citation
Thin Solid Films, v.520, no.10, pp.3800-3802
ISSN
0040-6090
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.tsf.2011.06.088
Project Code
10MB6800, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, Cheong Woo-Seok
Abstract
We demonstrate that the voltage-dependent average mobility of In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) can be excellently fitted by an empirical mobility function based on the exponential density of deep and tail states. The proposed mobility function needs only 5 parameters and does not need the concept of the threshold voltage which is inherently ambiguous in amorphous oxide TFTs. Both the transfer and output curves of the device are well reproduced by integrating the mobility function. © 2011 Elsevier B.V. All rights reserved.
KSP Keywords
Amorphous InGaZnO thin film, Amorphous oxide, In-Ga-Zn-O(IGZO), Oxide TFTs, Thin-Film Transistor(TFT), tail states, thin film(TF), threshold voltage(Vth), voltage-dependent