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Journal Article
Effects of the Composition of Sputtering Target on the Stability of InGaZnO Thin Film Transistor
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- Authors
- Jun-Young Huh, Jae-Hong Jeon, Hee-Hwan Choe, Kang-Woong Lee, Jong-Huyn Seo, Min-Ki Ryu, Sang-Hee Ko Park, Chi-Sun Hwang, Woo-Seok Cheong
- Issue Date
- 2011-08
- Citation
- Thin Solid Films, v.519, no.20, pp.6868-6871
- ISSN
- 0040-6090
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- In this study, we investigated the electrical characteristics and the stability of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) from the viewpoint of active layer composition. Active layers of TFTs were deposited by r.f. sputtering. Two kinds of sputtering targets, which have different compositional ratios of In:Ga:Zn, were used to make variations in the active layer composition. All the fabricated IGZO TFTs showed more excellent characteristics than conventional amorphous silicon TFTs. However, in accordance with the Ga content, IGZO TFTs showed somewhat different electrical characteristics in values such as the threshold voltage and the field effect mobility. The device stability was also dependent on the Ga content, but had trade-off relation with the electrical characteristics. © 2011 Elsevier B.V.
- KSP Keywords
- Active Layer, Compositional ratios, Device stability, Ga content, IGZO TFTs, Layer composition, Sputtering target, Thin-Film Transistor(TFT), Trade-off, Zinc oxide(ZnO), amorphous indium-gallium-zinc oxide(a-IGZO)