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Journal Article Effects of the Composition of Sputtering Target on the Stability of InGaZnO Thin Film Transistor
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Authors
허준영, 전재홍, 최희환, 이강웅, 서종현, Ryu Min Ki, Park Sang-Hee, Hwang Chi-Sun, Cheong Woo-Seok
Issue Date
201108
Source
Thin Solid Films, v.519 no.20, pp.6868-6871
ISSN
0040-6090
Publisher
Elsevier
DOI
https://dx.doi.org/10.1016/j.tsf.2011.01.400
Project Code
10MB6800, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, Cheong Woo-Seok
Abstract
In this study, we investigated the electrical characteristics and the stability of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) from the viewpoint of active layer composition. Active layers of TFTs were deposited by r.f. sputtering. Two kinds of sputtering targets, which have different compositional ratios of In:Ga:Zn, were used to make variations in the active layer composition. All the fabricated IGZO TFTs showed more excellent characteristics than conventional amorphous silicon TFTs. However, in accordance with the Ga content, IGZO TFTs showed somewhat different electrical characteristics in values such as the threshold voltage and the field effect mobility. The device stability was also dependent on the Ga content, but had trade-off relation with the electrical characteristics. © 2011 Elsevier B.V.
KSP Keywords
Active Layer, Compositional ratios, Device stability, Ga content, IGZO TFTs, Layer composition, Sputtering target, Thin-Film Transistor(TFT), Trade-off, Zinc oxide(ZnO), amorphous indium-gallium-zinc oxide(a-IGZO)