상세정보
학술지
Effects of the Composition of Sputtering Target on the Stability of InGaZnO Thin Film Transistor
- 발행일
- 201108
- 출처
- Thin Solid Films, v.519 no.20, pp.6868-6871
- ISSN
- 0040-6090
- 출판사
- Elsevier
- 협약과제
- 10MB6800, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, 정우석
- 초록
- In this study, we investigated the electrical characteristics and the stability of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) from the viewpoint of active layer composition. Active layers of TFTs were deposited by r.f. sputtering. Two kinds of sputtering targets, which have different compositional ratios of In:Ga:Zn, were used to make variations in the active layer composition. All the fabricated IGZO TFTs showed more excellent characteristics than conventional amorphous silicon TFTs. However, in accordance with the Ga content, IGZO TFTs showed somewhat different electrical characteristics in values such as the threshold voltage and the field effect mobility. The device stability was also dependent on the Ga content, but had trade-off relation with the electrical characteristics. © 2011 Elsevier B.V.
- KSP 제안 키워드
- Active Layer, Compositional ratios, Device stability, Ga content, IGZO TFTs, Layer composition, Sputtering target, Thin-Film Transistor(TFT), Trade-off, Zinc oxide(ZnO), amorphous indium-gallium-zinc oxide(a-IGZO)