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Conference Paper A 16 Watt X-Band GaN High Power Amplifier MMIC for Phased Array Applications
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Authors
Y. S. Noh, I. B. Yom
Issue Date
2016-06
Citation
International Conference on Microwave and Millimeter Wave Technology (ICMMT) 2016, pp.1-3
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1109/ICMMT.2016.7762506
Abstract
For the next generation HPA MMIC, a 16 watts two-stage X-band GaN HPA MMIC is described in this paper. The MMIC has been designed and fabricated by using a 0.25 um GaN HEMT process. The MMIC under a drain voltage of 28 V exhibits pulsed output power of 42.1 dBm (16 watts) with an associated PAE from 37.75 % to 41.55 % over the frequency range of 8.5 ~ 10.5 GHz. The fabricated MMIC is as small as 3.65 mm × 2.5 mm (area of 9.125 mm2).
KSP Keywords
5 GHz, Drain voltage, Frequency Range, GaN HEMT, GaN HPA, High power amplifier(HPA), Output power, Power amplifier MMIC, Two-Stage, phased array, power amplifiers(PAs)