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학술대회 A 16 Watt X-Band GaN High Power Amplifier MMIC for Phased Array Applications
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저자
노윤섭, 염인복
발행일
201606
출처
International Conference on Microwave and Millimeter Wave Technology (ICMMT) 2016, pp.1-3
DOI
https://dx.doi.org/10.1109/ICMMT.2016.7762506
협약과제
15MR4900, MMIC 기반 X-band GaN SSPA 상세설계 및 인증, 염인복
초록
For the next generation HPA MMIC, a 16 watts two-stage X-band GaN HPA MMIC is described in this paper. The MMIC has been designed and fabricated by using a 0.25 um GaN HEMT process. The MMIC under a drain voltage of 28 V exhibits pulsed output power of 42.1 dBm (16 watts) with an associated PAE from 37.75 % to 41.55 % over the frequency range of 8.5 ~ 10.5 GHz. The fabricated MMIC is as small as 3.65 mm × 2.5 mm (area of 9.125 mm2).
키워드
Gallium Nitride (GaN), high electron mobility transistor (HEMT), high power amplifier (HPA), monolithic microwave integrated circuit (MMIC), X-band
KSP 제안 키워드
5 GHz, Drain voltage, Frequency Range, GaN HEMT, GaN HPA, High electron mobility transistor(HEMT), High power amplifier(HPA), Microwave monolithic integrated circuits(MMIC), Output power, Power amplifier MMIC, Two-Stage