상세정보
학술대회
A 16 Watt X-Band GaN High Power Amplifier MMIC for Phased Array Applications
- 발행일
- 201606
- 출처
- International Conference on Microwave and Millimeter Wave Technology (ICMMT) 2016, pp.1-3
- 협약과제
- 15MR4900, MMIC 기반 X-band GaN SSPA 상세설계 및 인증, 염인복
- 초록
- For the next generation HPA MMIC, a 16 watts two-stage X-band GaN HPA MMIC is described in this paper. The MMIC has been designed and fabricated by using a 0.25 um GaN HEMT process. The MMIC under a drain voltage of 28 V exhibits pulsed output power of 42.1 dBm (16 watts) with an associated PAE from 37.75 % to 41.55 % over the frequency range of 8.5 ~ 10.5 GHz. The fabricated MMIC is as small as 3.65 mm × 2.5 mm (area of 9.125 mm2).
- KSP 제안 키워드
- 5 GHz, Drain voltage, Frequency Range, GaN HEMT, GaN HPA, High power amplifier(HPA), Output power, Power amplifier MMIC, Two-Stage, phased array, power amplifiers(PAs)