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Journal Article
Characterization of Transmission Lines with Through-silicon-vias and Bump Joints on High-resistivity Si Interposers for RF Three-dimensional Modules
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- Issue Date
- 2016-05
- Citation
- Japanese Journal of Applied Physics, v.55, no.6S3, pp.1-5
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- Microstrip lines and coplanar waveguides (CPWs) for RF three-dimensional (3D) modules were characterized on high-resistivity Si interposers: 2,000 廓&cm. The diameter and thickness of through-silicon-vias (TSVs) in Si interposers were 50 and 250 쨉m, respectively. A signal TSV around five ground TSVs, and a signal solder bump around five ground solder bumps were designed to obtain the vertical transitions with low electrical loss between the transmission lines. For the 3D interconnections between Si interposers, a fluxing underfill material was developed and used as a preapplied underfill during the thermocompression bonding. The S-parameters of transmission lines and stacked transmission lines were measured from 0.5 to 10 GHz using a vector network analyzer (VNA) and de-embedded so that their electrical losses were obtained and compared. By comparing with the electrical loss of the transmission line on low-temperature cofired ceramics (LTCC), we found that both transmission lines were sufficiently good for applications in RF 3D modules.
- KSP Keywords
- 10 Ghz, Coplanar Waveguide Feeding(CPW), De-embedded, Electrical loss, High resistivity, Low Temperature Cofired Ceramic(LTCC), Low temperature(LT), Microstrip Line, Solder bump, Three dimensional(3D), Through silicon vias(TSV)