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Conference Paper 6인치 4H-SiC Wafer기반 SiC Power Diode 소자 제작 및 특성 평가

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Authors: 원종일, 박건식, 구진근, 박종문, 유성욱, 노태문, 김상기

Issue Date: 2016-06

Citation: 대한전자공학회 종합 학술 대회 (하계) 2016, pp.258-259

Language: Korean

Type: Conference Paper

Project Code: 16ZB1600, Development of SiC based trench type next generation power device, Kim Sang Gi

KSP Keywords: 4H-SiC, Power Diode

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