상세정보
학술지
Doping-Concentration-Dependent Electric and Thermoelectric Properties of 2-Dimensional Silicon Thin Films
- 발행일
- 201606
- 출처
- Journal of the Korean Physical Society, v.68 no.12, pp.1472-1475
- ISSN
- 0374-4884
- 출판사
- 한국물리학회
- 협약과제
- 16PB1200, 고상 전자냉각용 다결정 열전소재 개발, 문승언
- 초록
- To study the electric and the thermoelectric properties of silicon thin films (SiTFs), we fabricated devices having SiTFs by using conventional complementary metal-oxide-semiconductor (CMOS)-compatible processes for mass production and extendibility. The conductivities and the Seebeck coefficients of SiTFs for dose concentrations of 5 × 1014 cm -2, 1 × 1015 cm -2 and 5 × 1015 cm -2 and for temperatures in the range of 310 to 430 K were measured by using homemade setup. The measured power factors of the SiTFs showed a slight increasing tendency with increasing measurement temperature and were maximum at a dose concentration of 1 × 1015 cm -2 for both n- and p-type films at 330 K.
- KSP 제안 키워드
- Complementary metal-oxide-semiconductor(CMOS), Metal-oxide(MOX), Power factor(P.F), Seebeck coefficient, Silicon thin film, mass production, p-Type, thermoelectric properties, thin film(TF)