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학술지 Improved Thin-Film Transistor Performance of Low-Temperature, Solution-Processed Indium Oxide by Controlling Solution Temperature
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저자
강찬모, 류진화, 김훈, 오연화, 백규하, 도이미
발행일
201608
출처
Journal of Nanoscience and Nanotechnology, v.16 no.8, pp.8473-8477
ISSN
1533-4880
출판사
American Scientific Publishers (ASP)
DOI
https://dx.doi.org/10.1166/jnn.2016.12495
협약과제
15PC4500, 인쇄 공정을 이용한 40인치 이상의 디지털 사이니지 디스플레이용 TFT array 개발, 백규하
초록
In this study, we achieved a low-temperature, high performance thin-film transistor by controlling solution temperature. Indium nitrate hydrates were dissolved in DI water and vigorously stirred for 6 hours maintaining two different solution temperatures: 0-4 °C and 25 °C. Then, the indium nitrate solutions with different solution temperatures were spin-coated with a spin speed of 4000 rpm for 30 s. After that, the coated films were annealed at 200 °C for 4 hours. Finally, 50-nm thick aluminum was thermally deposited to form source/drain electrodes. The results showed that the XPS O 1s spectrum of the film using the cold solution exhibits a higher metal-oxide lattice peak than that using the room temperature solution. Furthermore, the device performance of the InOx thin-film transistor (TFT) with the ice bath stirred solution was better than that with the room-temperature stirred solution. The mobility of the InOx TFT annealed at 200 °C with the ice bath stirred solution and the room temperature stirred solution was measured to be 0.94 and 0.66 cm2/Vs, respectively.
KSP 제안 키워드
000 rpm, High performance, Indium nitrate, Low temperature(LT), Metal-oxide(MOX), Nitrate solutions, O 1s, Room-temperature, Solution Temperature, Solution-processed indium oxide, Source/drain electrodes