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Improved Thin-Film Transistor Performance of Low-Temperature, Solution-Processed Indium Oxide by Controlling Solution Temperature
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- Authors
- Chan-Mo Kang, Jin Hwa Ryu, Hoon Kim, Yeon-Wha Oh, Kyu-Ha Baek, Lee-Mi Do
- Issue Date
- 2016-08
- Citation
- Journal of Nanoscience and Nanotechnology, v.16, no.8, pp.8473-8477
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- In this study, we achieved a low-temperature, high performance thin-film transistor by controlling solution temperature. Indium nitrate hydrates were dissolved in DI water and vigorously stirred for 6 hours maintaining two different solution temperatures: 0-4 °C and 25 °C. Then, the indium nitrate solutions with different solution temperatures were spin-coated with a spin speed of 4000 rpm for 30 s. After that, the coated films were annealed at 200 °C for 4 hours. Finally, 50-nm thick aluminum was thermally deposited to form source/drain electrodes. The results showed that the XPS O 1s spectrum of the film using the cold solution exhibits a higher metal-oxide lattice peak than that using the room temperature solution. Furthermore, the device performance of the InOx thin-film transistor (TFT) with the ice bath stirred solution was better than that with the room-temperature stirred solution. The mobility of the InOx TFT annealed at 200 °C with the ice bath stirred solution and the room temperature stirred solution was measured to be 0.94 and 0.66 cm2/Vs, respectively.
- KSP Keywords
- 000 rpm, Coated films, High performance, Indium nitrate, Metal-oxide(MOX), Nitrate solution, O 1s, Room temperature, Solution Temperature, Solution-processed indium oxide, Source/drain electrodes