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Conference Paper
Common-Source Inductance Reduction in GaN Cascode FET for High- Speed Switching and High-Efficiency Operation
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- Authors
- Woojin Chang, Young-Rak Park, Jae-Kyoung Mun, Jong-Won Lim
- Issue Date
- 2016-07
- Citation
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
- Language
- English
- Type
- Conference Paper
- Abstract
- This paper aims to reduce the most critical parasitic inductance of a GaN cascode FET using an additional bonding wire interconnected between the source electrode of a low-voltage (LV) normally-off Si MOSFET and the gate electrode of a high-voltage (HV) normally-on GaN FET for high-speed switching and high-efficiency operation. A common-source inductance (CSI) is defined as the inductance shared by the power loop and driving loop, to be the most critical parasitic element. The CSI acts as negative feedback to slow down the driver during the turn-on and turn-off transitions, thus, it prolongs the voltage and current crossover time, and significantly increases the switching loss. In terms of the GaN cascode FET, because L int3 is the CSI of the HV normally-on GaN FET and the LV normally-off Si MOSFET, it should be the most critical inductance, providing the major switching loss [1]. Compared with a conventional GaN cascode FET, shown in Fig. 1, the proposed GaN cascode FET has an additional inductor (bonding wire, L gs,int ) to reduce the most critical inductance acting as the CSI. From the measured results of the proposed and conventional GaN cascode FETs, shown in Table 1, the rising and falling times of the proposed GaN cascode FET were up to 3.4% and 8.0% faster than those of the conventional GaN cascode FET, respectively, under measurement conditions of 30 V and 5 A. During the rising and falling times, the energy losses of the proposed GaN cascode FET were up to 0.3% and 6.7% lower than those of the conventional GaN cascode FET, respectively. The total on/off switching time and energy loss of the proposed GaN cascode FET for one cycle were up to 1.2% and 3.6% lower than those of the conventional GaN cascode FET, respectively, under the same measurement conditions.
- KSP Keywords
- Bonding wires, GaN FET, High Voltage, High-speed switching, Low voltage, Major switching, Normally-Off, Normally-On, Parasitic inductance, Power loop, Switching Loss