상세정보
학술지
The Bilayer Structure for Low-Temperature, Solution-Processed Indium Zinc Oxide Thin-Film Transistors
- 발행일
- 201608
- 출처
- Journal of Nanoscience and Nanotechnology, v.16 no.8, pp.8692-8695
- ISSN
- 1533-4880
- 출판사
- American Scientific Publishers (ASP)
- 협약과제
- 15PC2500, 150ºC이하 인쇄기반 플렉세블 디스플에이 백플레인용 산화물 반도체, 절연체 잉크소재 및 공정 기술 개발, 도이미
- 초록
- In this study, we propose a bilayer approach in a solution-processed high performance indium oxide/zinc oxide (IO/ZO) TFT to lower the fabrication temperature. The device consists of an IO/ZO oxide bilayer in which metal oxide precursors such as zinc hydroxide and indium nitrate hydrate were used. By forming a zinc oxide layer on the indium oxide layer, carrier concentration in the indium oxide layer can be effectively suppressed. As a result, the fabricated devices exhibited high performance indium and zinc oxide TFT with annealing temperature of 200 °C by applying the indium oxide/zinc oxide bilayer: on/off ratio of ~107 and mobility of 1.06 cm2/Vs.
- KSP 제안 키워드
- Annealing temperature, Bilayer structure, Carrier concentration, High performance, Indium nitrate, Indium zinc oxide, Low temperature(LT), Metal-oxide(MOX), Oxide TFTs, Oxide precursors, Solution-processed