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Journal Article
The Bilayer Structure for Low-Temperature, Solution-Processed Indium Zinc Oxide Thin-Film Transistors
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- Authors
- Oh Yeon-Wha, Kang Chan-Mo, Ryu Jin Hwa, Kim Hoon, Baek Kyu-Ha, Lee Ga-Won, Lee Sanggeun, Seo Geumseok, Kim Hongdoo, Do Lee-Mi
- Issue Date
- 2016-08
- Citation
- Journal of Nanoscience and Nanotechnology, v.16, no.8, pp.8692-8695
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- In this study, we propose a bilayer approach in a solution-processed high performance indium oxide/zinc oxide (IO/ZO) TFT to lower the fabrication temperature. The device consists of an IO/ZO oxide bilayer in which metal oxide precursors such as zinc hydroxide and indium nitrate hydrate were used. By forming a zinc oxide layer on the indium oxide layer, carrier concentration in the indium oxide layer can be effectively suppressed. As a result, the fabricated devices exhibited high performance indium and zinc oxide TFT with annealing temperature of 200 °C by applying the indium oxide/zinc oxide bilayer: on/off ratio of ~107 and mobility of 1.06 cm2/Vs.
- KSP Keywords
- Annealing temperature, Bilayer structure, Carrier concentration, High performance, Indium Zinc Oxide, Indium nitrate, Metal-oxide(MOX), ON/OFF ratio, Oxide TFTs, Oxide precursors, Solution-processed