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X-밴드 응용분야를 위한 GaN HEMT 모델링
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- Issue Date
- 2016-06
- Citation
- 대한전자공학회 종합 학술 대회 (하계) 2016, pp.2557-2560
- Publisher
- 대한전자공학회
- Language
- Korean
- Type
- Conference Paper
- Abstract
- This paper describes modeling of AlGaN/GaN High Electron Mobility Transistors(HEMTs) for X-band applications. The AlGaN/GaN HEMTs with a gate length of 0.25 ㎛ and a total gate width of 800 um were fabricated by ETRI. The model of GaN HEMT devices is Angelov-GaN model for high power applications. Procedure of modeling is as follows. 1. DC measurements, 2. NWA(Network Analyzer) calibration, 3. NWA De-embedding, 4. S-parameter measurement, 5. DC extraction, 6. S-parameter extraction, 7 Global optimization, 8. HB simulation to verify Spectrum. Comparing with model simulation and measurement data, the model parameters were obtained. We will design X-band PA MMIC using Angelov-GaN model.
- KSP Keywords
- AlGaN/GaN HEMTs, DC measurements, GaN HEMT devices, Gate Width, High power applications, High-electron mobility transistor(HEMT), Model and Simulation, Model parameter, Network analyzer(NA), S-parameter extraction, S-parameter measurement