BROWSE
Detail
Conference Paper
Backside Process of AlGaN/GaN HEMT on SiC with Optimized Via-Hole Etching Conditions
Cited - time in 
Share 
Share
- Authors
- Byoung-Gue MIN, Hyung Sup YOON, Haecheon KIM, Ho-Kyun AHN, Kyu-Jun CHO, Jae-Won DO, Hyun-Wook JUNG, Min-Jeong SHIN, Jong-Won LIM
- Issue Date
- 2016-07
- Citation
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- AlGaN/GaN HEMTs, Etching conditions, Via-hole