ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 A Linear GaN High Power Amplifier MMIC for Ka-Band Satellite Communications
Cited 26 time in scopus Download 4 time Share share facebook twitter linkedin kakaostory
저자
노윤섭, 염인복
발행일
201608
출처
IEEE Microwave and Wireless Components Letters, v.26 no.8, pp.619-621
ISSN
1531-1309
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LMWC.2016.2585553
협약과제
15DR2300, Ka대역 GaN MMIC 기반 SSPA 개발 , 노윤섭
초록
A linear high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) is designed with 0.15 μm gallium nitride (GaN) high electron mobility transistor (HEMT) technology on silicon carbide (SiC) substrate. To keep the linear characteristics of the power stage, 2:4:8 staging ratio of 8 × 50 μm unit transistor is adapted for the 3-stage HPA MMIC. The MMIC delivers P3 dB of 39.5 dBm with a PAE of 35% at 21.5 GHz. Linear output power (PL) meeting IMD3 of -25 dBc is 37.3 dBm with an associated PAE of 29.5%. The MMIC dimensions are 3.4 mm × 2.5 mm, generating an output power density of 1049 mW/mm2.
키워드
High electron mobility transistor (HEMT), high power amplifier (HPA), Ka-band, monolithic microwave integrated circuit (MMIC)
KSP 제안 키워드
5 GHz, High electron mobility transistor(HEMT), High power amplifier(HPA), Microwave monolithic integrated circuits(MMIC), Output power density, Power amplifier MMIC, Power stage, ka-band, microwave integrated circuit, power amplifiers(PAs), satellite communication