상세정보
학술지
Non-volatile Organic Ferroelectric Memory Transistors Fabricated using Rigid Polyimide Islands on an Elastomer Substrate
- 발행일
- 201605
- 출처
- Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.4 no.20, pp.4485-4490
- ISSN
- 2050-7526
- 출판사
- Royal Society of Chemistry (RSC)
- 협약과제
- 16MB1100, 미래광고 서비스를 위한 에너지절감형 환경적응 I/O (Input/Output) 플랫폼 기술 개발, 황치선
- 초록
- The authors fabricated stretchable organic ferroelectric memory transistors (OFMTs) on a polydimethylsiloxane substrate using rigid polyimide island structures. The OFMTs exhibited a field-effect mobility of 4 × 10-2 cm2 V-1 s-1 and a current on/off ratio of 105 with a notably low threshold voltage. Furthermore, our memory TFTs exhibit excellent mechanical stability, showing no noticeable change in electrical performance up to a large strain of 50%. These results indicated the feasibility of a promising device for stretchable electronic systems.
- KSP 제안 키워드
- Electronic systems, First Stokes(S1), Large strains, Mechanical stability, current on-off ratio, elastomer substrate, electrical performance, ferroelectric memory, field-effect mobility, low threshold voltage, non-volatile