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Journal Article
Non-volatile Organic Ferroelectric Memory Transistors Fabricated using Rigid Polyimide Islands on an Elastomer Substrate
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- Authors
- Soon-Won Jung, Jae Bon Koo, Chan Woo Park, Bock Soon Na, Nae-Man Park, Ji-Young Oh, Yu Gyeong Moon, Sang Seok Lee, Kyung-Wan Koo
- Issue Date
- 2016-05
- Citation
- Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.4, no.20, pp.4485-4490
- ISSN
- 2050-7526
- Publisher
- Royal Society of Chemistry (RSC)
- Language
- English
- Type
- Journal Article
- Abstract
- The authors fabricated stretchable organic ferroelectric memory transistors (OFMTs) on a polydimethylsiloxane substrate using rigid polyimide island structures. The OFMTs exhibited a field-effect mobility of 4 × 10-2 cm2 V-1 s-1 and a current on/off ratio of 105 with a notably low threshold voltage. Furthermore, our memory TFTs exhibit excellent mechanical stability, showing no noticeable change in electrical performance up to a large strain of 50%. These results indicated the feasibility of a promising device for stretchable electronic systems.
- KSP Keywords
- Electronic systems, First Stokes(S1), Large strains, Mechanical stability, current on-off ratio, elastomer substrate, electrical performance, ferroelectric memory, field-effect mobility, low threshold voltage, non-volatile