상세정보
학술지
Hydrazine (N2H4)-Based Surface Treatment for Interface Quality Improvement in Al2O3/AlGaN/GaN MIS-HEMT
- 발행일
- 201703
- 출처
- ECS Journal of Solid State Science and Technology, v.6 no.4, pp.184-186
- ISSN
- 2162-8769
- 출판사
- Electrochemical Society (ECS)
- 협약과제
- 16DB1400, GaN RF 전력증폭 소자 설계 개발, 임종원
- 초록
- This paper highlights N2H4 treatment on AlGaN surface prior to Al2O3 deposition for insulator/III-nitride interface quality improvement. AlGaN surface with and without N2H4 treatment was systematically analyzed through X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), which show an effective removal of the native oxide and improved roughness on AlGaN surface. In order to investigate the effects of N2H4 treatment on the electrical properties of Al2O3/AlGaN/GaN MIS-HEMT, capacitance-voltage (C(V)) characteristics and transfer characteristics after gate bias stress were measured. Compared to the devices without N2H4 treatment featuring a large hysteresis of 0.3 V and a high subthreshold slope (SS) = 119 mV/dec, N2H4-treated devices exhibit an almost negligible hysteresis of 50 mV and an improved SS of 105 mV/dec.
- KSP 제안 키워드
- 3 V, AlGaN/GaN MIS-HEMT, Atomic force microscope(AFM), Atomic force microscopy (afm), Capacitance-voltage, Gate bias stress, III-Nitrides, Native oxide, Quality improvement, Subthreshold slope(SS), Surface treatments