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학술지 Pre-Annealing Effect for Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistors
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저자
강찬모, 김훈, 오연화, 백규하, 도이미
발행일
201705
출처
Journal of Nanoscience and Nanotechnology, v.17 no.5, pp.3293-3297
ISSN
1533-4880
출판사
American Scientific Publishers (ASP)
DOI
https://dx.doi.org/10.1166/jnn.2017.14065
협약과제
15PC4500, 인쇄 공정을 이용한 40인치 이상의 디지털 사이니지 디스플레이용 TFT array 개발, 백규하
초록
In this study, we improved the electrical performance of low-temperature, solution-processed indium oxide thin-film transistors (fabricated at 200°C) by employing a pre-annealing process. The preannealed films exhibit dense and smooth surfaces in contrast to the rough and large grains found on films without pre-annealing, as determined using atomic force microscopy and transmission electron microscopy. The O 1s peak in X-ray photoelectron spectroscopy shows a higher metal oxide lattice peak obtained by employing the pre-annealing process, which implies stronger electrical transport behavior. Therefore, the overall electrical characteristics of the thin-film transistors are improved by pre-annealing in terms of mobility, on/off ratio, subthreshold swing, and hysteresis.
KSP 제안 키워드
Annealing effects, Atomic force microscope(AFM), Electrical transport, Large grain, Low temperature(LT), Metal-oxide(MOX), O 1s, Pre-annealing, Smooth surface, Solution-processed indium oxide, Thin-Film Transistor(TFT)