상세정보
학술지
Improved Stability of Electrical Properties of Nitrogen-added Al2O3 Films Grown by PEALD as Gate Dielectric
- 발행일
- 201611
- 출처
- Materials Research Bulletin, v.83, pp.597-602
- ISSN
- 0025-5408
- 출판사
- Elsevier
- 협약과제
- 16PB3100, 다층 나노 박막을 이용한 자동차용 고성능 투명 발열소자 개발, 임정욱
- 초록
- The electrical properties of Al2O3 films have been studied as the dielectric materials for electronic devices which require a low leakage current and high breakdown field. In this work, Al2O3 films with various thicknesses (as low as 10??30혻nm) were deposited onto Si substrates by plasma-enhanced atomic layer deposition (PEALD), and current density?? field curves were measured after post-annealing to verify their electrical properties. One thing to note is that, during PEALD, nitrogen gas was introduced to improve the thermal stability of the Al2O3 films. Breakdown field for add-nitrogen Al2O3 of 30혻nm-thick film was enhanced from 6혻MV/cm to 10혻MV/cm as incorporating nitrogen.
- KSP 제안 키워드
- Dielectric materials, High breakdown field, Improved stability, Plasma-enhanced atomic layer deposition, Post-annealing, Si substrate, Thermal stability(TGA), Thick films, current density, electrical properties(I-V curve), electronic devices