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Journal Article
Improved stability of electrical properties of nitrogen-added Al 2 O 3 films grown by PEALD as gate dielectric
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- Authors
- Da Jung Lee, Jung Wook Lim, Jae Kyoung Mun, Sun Jin Yun
- Issue Date
- 2016-11
- Citation
- Materials Research Bulletin, v.83, pp.597-602
- ISSN
- 0025-5408
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- The electrical properties of Al2O3 films have been studied as the dielectric materials for electronic devices which require a low leakage current and high breakdown field. In this work, Al2O3 films with various thicknesses (as low as 10??30혻nm) were deposited onto Si substrates by plasma-enhanced atomic layer deposition (PEALD), and current density?? field curves were measured after post-annealing to verify their electrical properties. One thing to note is that, during PEALD, nitrogen gas was introduced to improve the thermal stability of the Al2O3 films. Breakdown field for add-nitrogen Al2O3 of 30혻nm-thick film was enhanced from 6혻MV/cm to 10혻MV/cm as incorporating nitrogen.
- KSP Keywords
- Dielectric materials, Electrical properties, High breakdown field, Low leakage current, O 3, Plasma-enhanced atomic layer deposition, Post-annealing, Si substrate, Thick films, current density, electronic devices