상세정보
학술지
The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors
- 발행일
- 201704
- 출처
- Thin Solid Films, v.628, pp.31-35
- ISSN
- 0040-6090
- 출판사
- Elsevier
- 협약과제
- 16MB1800, 고효율 GaN 기반 기지국/단말기용 핵심부품 및 모듈 개발, 임종원
- 초록
- AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated using a gate recess process and a surface treatment with tetramethylammonium hydroxide (TMAH) prior to gate metal deposition. Electrical characterizations show improved extrinsic transconductance and saturation current, as well as more uniform off-state behavior with reduced off-current by a factor of 3.5 and gate leakage current by a factor of 4.2 in the devices with TMAH treatment. The analyses based on atomic force microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy show that the TMAH treatment effectively reduces the roughness of the recess-etched AlGaN surface and removes the native oxide layer on the AlGaN surface, suggesting a simple and viable route towards the fabrication of gate-recessed HEMTs based on AlGaN/GaN heterostructure with improved controllability and uniformity.
- KSP 제안 키워드
- AND gate, AlGaN/GaN heterostructure, Atomic force microscope(AFM), Electrical characterization, Gate recess, High electron mobility transistor(HEMT), Native oxide layer, Off Current, Off-State, Surface treatments, Tetramethylammonium hydroxide