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Journal Article
The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors
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- Authors
- Jae-Won Do, Hyun-Wook Jung, Min Jeong Shin, Ho-Kyun Ahn, Haecheon Kim, Ryun-Hwi Kim, Kyu Jun Cho, Sung-Jae Chang, Byoung-Gue Min, Hyung Sup Yoon, Ji-Heon Kim, Jin-Mo Yang, Jung-Hee Lee, Jong-Won Lim
- Issue Date
- 2017-04
- Citation
- Thin Solid Films, v.628, pp.31-35
- ISSN
- 0040-6090
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Project Code
- 16MB1800, Development of High Efficiency GaN-based Key Components and Modules for Base and Mobile Stations, Jong-Won Lim
- Abstract
- AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated using a gate recess process and a surface treatment with tetramethylammonium hydroxide (TMAH) prior to gate metal deposition. Electrical characterizations show improved extrinsic transconductance and saturation current, as well as more uniform off-state behavior with reduced off-current by a factor of 3.5 and gate leakage current by a factor of 4.2 in the devices with TMAH treatment. The analyses based on atomic force microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy show that the TMAH treatment effectively reduces the roughness of the recess-etched AlGaN surface and removes the native oxide layer on the AlGaN surface, suggesting a simple and viable route towards the fabrication of gate-recessed HEMTs based on AlGaN/GaN heterostructure with improved controllability and uniformity.
- KSP Keywords
- AND gate, AlGaN/GaN heterostructure, Atomic force microscope(AFM), Electrical characterization, Gate recess, High electron mobility transistor(HEMT), Native oxide layer, Off Current, Off-State, Surface treatments, Tetramethylammonium hydroxide