상세정보
학술지
Pulse-Mode Dynamic Ron Measurement of Large-Scale High-Power AlGaN/GaN HFET
- 발행일
- 201704
- 출처
- ETRI Journal, v.39 no.2, pp.292-299
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 15PB6600, IEEE 802.3bt 대응 Power-over-Ethernet용 2% 이상 효율 증가 60/90W급 Power Sourcing Equipment/Powered Device 개발, 정동윤
- 초록
- We propose pulse-mode dynamic Ron measurement as a method for analyzing the effect of stress on large-scale high-power AlGaN/GaN HFETs. The measurements were carried out under the soft-switching condition (zero-voltage switching) and aimed to minimize the self-heating problem that exists with the conventional hard-switching measurement. The dynamic Ron of the fabricated AlGaN/GaN MIS-HFETs was measured under different stabilization time conditions. To do so, the drain-gate bias is set to zero after applying the off-state stress. As the stabilization time increased from 0.1 μs to 100 ms, the dynamic Ron decreased from 160 廓 to 2 廓. This method will be useful in developing high-performance GaN power FETs suitable for use in high-efficiency converter/inverter topology design.
- KSP 제안 키워드
- AlGaN/GaN HFET, Dynamic Ron, GaN HFETS, High performance, High power, Inverter topology, Self-heating, Soft switching, Switching conditions, Topology design, gate bias
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