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Journal Article
Pulse-Mode Dynamic Ron Measurement of Large-Scale High-Power AlGaN/GaN HFET
- Authors
- Minki Kim, Youngrak Park, Junbo Park, Dong Yun Jung, Chi-Hoon Jun, Sang Choon Ko
- Issue Date
- 2017-04
- Citation
- ETRI Journal, v.39, no.2, pp.292-299
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Project Code
- 15PB6600, 2% min Energy Saving Power Sourcing Equipment/Powered Device Development for IEEE802.3bt Power-over-Ethernet, Jung Dong Yun
- Abstract
- We propose pulse-mode dynamic Ron measurement as a method for analyzing the effect of stress on large-scale high-power AlGaN/GaN HFETs. The measurements were carried out under the soft-switching condition (zero-voltage switching) and aimed to minimize the self-heating problem that exists with the conventional hard-switching measurement. The dynamic Ron of the fabricated AlGaN/GaN MIS-HFETs was measured under different stabilization time conditions. To do so, the drain-gate bias is set to zero after applying the off-state stress. As the stabilization time increased from 0.1 μs to 100 ms, the dynamic Ron decreased from 160 廓 to 2 廓. This method will be useful in developing high-performance GaN power FETs suitable for use in high-efficiency converter/inverter topology design.
- KSP Keywords
- AlGaN/GaN HFET, Dynamic Ron, GaN HFETS, High performance, High power, Inverter topology, Self-heating, Soft switching, Switching conditions, Topology design, gate bias
This work is distributed under the term of Korea Open Government License (KOGL)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
