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학술대회 A Linear HBT Power Amplifier with an IMD3 Reduction Method for LTE-A Small-cell Base-station Applications
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저자
이희동, 장승현, 박봉혁
발행일
201608
출처
Asia-Pacific Radio Science Conference (AP-RASC) 2016, pp.1901-1902
출판사
URSI
DOI
https://dx.doi.org/10.1109/URSIAP-RASC.2016.7601213
협약과제
15PI1700, LTE-A기지국용 전력증폭기를 포함하는 RF Transceiver통합칩 개발, 박봉혁
초록
A highly linear HBT power amplifier (PA) for LTE-A small-cell base-stations is presented. By separating a bias point of the PA sub-cells and combining these outputs with out-of phasing, the third-order intermodulation distortion (IMD) can be reduced. By the simulation results, the third-order IMDs are approximately -50 dBc and -43 dBc with and without the separate biasing at an output power of 29 dBm, respectively. The designed HBT PA has a gain of 31 dB, a P1dB of 35 dBm, and a PAE of 38.1% under 5 V supply voltage.
키워드
intermodulation distortion, linearity, power amplifier, transconductance
KSP 제안 키워드
Highly linear, Long term evolution-advanced(LTE-A), Output power, Reduction method, Small cells, Supply voltage, base station(BS), bias point, power amplifiers(PAs), simulation results, third-order intermodulation distortion