상세정보
학술대회
A Linear HBT Power Amplifier with an IMD3 Reduction Method for LTE-A Small-cell Base-station Applications
- 발행일
- 201608
- 출처
- Asia-Pacific Radio Science Conference (AP-RASC) 2016, pp.1901-1902
- 출판사
- URSI
- 협약과제
- 15PI1700, LTE-A기지국용 전력증폭기를 포함하는 RF Transceiver통합칩 개발, 박봉혁
- 초록
- A highly linear HBT power amplifier (PA) for LTE-A small-cell base-stations is presented. By separating a bias point of the PA sub-cells and combining these outputs with out-of phasing, the third-order intermodulation distortion (IMD) can be reduced. By the simulation results, the third-order IMDs are approximately -50 dBc and -43 dBc with and without the separate biasing at an output power of 29 dBm, respectively. The designed HBT PA has a gain of 31 dB, a P1dB of 35 dBm, and a PAE of 38.1% under 5 V supply voltage.
- KSP 제안 키워드
- Highly linear, Long term evolution-advanced(LTE-A), Output power, Reduction method, Small cells, Supply voltage, base station(BS), bias point, power amplifiers(PAs), simulation results, third-order intermodulation distortion