BROWSE
Detail
Conference Paper
A Linear HBT Power Amplifier with an IMD3 Reduction Method for LTE-A Small-cell Base-station Applications
Cited 0 time in 
Share 
Share
- Authors
- Hui Dong Lee, Seunghyun Jang, Bonghyuk Park
- Issue Date
- 2016-08
- Citation
- Asia-Pacific Radio Science Conference (AP-RASC) 2016, pp.1901-1902
- Publisher
- URSI
- Language
- English
- Type
- Conference Paper
- Abstract
- A highly linear HBT power amplifier (PA) for LTE-A small-cell base-stations is presented. By separating a bias point of the PA sub-cells and combining these outputs with out-of phasing, the third-order intermodulation distortion (IMD) can be reduced. By the simulation results, the third-order IMDs are approximately -50 dBc and -43 dBc with and without the separate biasing at an output power of 29 dBm, respectively. The designed HBT PA has a gain of 31 dB, a P1dB of 35 dBm, and a PAE of 38.1% under 5 V supply voltage.
- KSP Keywords
- Highly linear, Long Term Evolution - Advanced(LTE-A), Output power, Reduction method, Small cells, Supply voltage, base station, bias point, power amplifiers(PAs), simulation results, third-order intermodulation distortion