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Journal Article
Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs
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- Authors
- Sung-Jae Chang, Hong Zhou, Nanbo Gong, Dong-Min Kang, Jong-Won Lim, Mengwei Si, Peide D. Ye, T. P. Ma
- Issue Date
- 2017-04
- Citation
- IEEE Electron Device Letters, v.38, no.4, pp.441-444
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- We report the characteristics of InGaAs-based independent double-gate FinFETs with Al2O3/LaAlO3 as gate dielectric. The device can be operated in three different modes (i.e., single-, double-, and independent double-gate) made possible by the physically separated two sidewall gates. When the device is operated in the double-gate mode, it exhibits better performance in terms of the On/Off current ratio, subthreshold swing, Off current, and channel mobility than in the single-gate mode. In addition, independent double-gate operation makes it possible to modulate channel properties by applying a bias at the opposite gate via gate coupling effects. Our systematic measurements reveal that gate control and coupling effects are enhanced with reduced fin width.