상세정보
학술지
Thickness-dependent Schottky Barrier Height of MoS2 Field-effect Transistors
- 저자
- 김준영, 이종영, 유영준, 이철호, Xu Cui, James Honed, 이관형
- 발행일
- 201705
- 출처
- Nanoscale, v.9 no.18, pp.6151-6157
- ISSN
- 2040-3364
- 출판사
- Royal Society of Chemistry (RSC)
- 초록
- 2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS2-metal contacts decreases with the thickness of MoS2. We obtained a Schottky barrier height as low as about 70 meV when MoS2 is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS2.
- KSP 제안 키워드
- 2D semiconductors, Contact resistance(73.40.Cg), Field-effect transistors(FETs), Optimal choice, Schottky barrier height, Thickness-dependent, device performance, layer thickness, metal contact, transition-metal dichalcogenides(TMDCs)