BROWSE
Detail
Journal Article
Thickness-dependent Schottky Barrier Height of MoS2 Field-effect Transistors
Cited 125 time in 
Share 
Share
- Authors
- Junyoung Kwon, Jong-Young Lee, Young-Jun Yu, Chul-Ho Lee, Xu Cui, James Honed, Gwan-Hyoung Lee
- Issue Date
- 2017-05
- Citation
- Nanoscale, v.9, no.18, pp.6151-6157
- ISSN
- 2040-3364
- Publisher
- Royal Society of Chemistry (RSC)
- Language
- English
- Type
- Journal Article
- Abstract
- 2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS2-metal contacts decreases with the thickness of MoS2. We obtained a Schottky barrier height as low as about 70 meV when MoS2 is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS2.
- KSP Keywords
- 2D semiconductors, Barrier height(BH), Contact resistance(73.40.Cg), Field Effect Transistor(FET), Layer thickness, Schottky barrier height, Thickness-dependent, device performance, metal contact, optimal choice, transition-metal dichalcogenides(TMDCs)