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Journal Article Thickness-dependent Schottky Barrier Height of MoS2 Field-effect Transistors
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Authors
Junyoung Kwon, Jong-Young Lee, Young-Jun Yu, Chul-Ho Lee, Xu Cui, James Honed, Gwan-Hyoung Lee
Issue Date
2017-05
Citation
Nanoscale, v.9, no.18, pp.6151-6157
ISSN
2040-3364
Publisher
Royal Society of Chemistry (RSC)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1039/c7nr01501a
Abstract
2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS2-metal contacts decreases with the thickness of MoS2. We obtained a Schottky barrier height as low as about 70 meV when MoS2 is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS2.
KSP Keywords
2D semiconductors, Contact resistance(73.40.Cg), Field-effect transistors(FETs), Optimal choice, Schottky barrier height, Thickness-dependent, device performance, layer thickness, metal contact, transition-metal dichalcogenides(TMDCs)