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학술지 Thickness-dependent Schottky Barrier Height of MoS2 Field-effect Transistors
Cited 40 time in scopus
저자
김준영, 이종영, 유영준, 이철호, Xu Cui, James Honed, 이관형
발행일
201705
출처
Nanoscale, v.9 no.18, pp.6151-6157
ISSN
2040-3364
출판사
Royal Society of Chemistry (RSC)
DOI
https://dx.doi.org/10.1039/c7nr01501a
협약과제
17HB1300, 차세대 신기능 스마트디바이스 플랫폼을 위한 대면적 이차원소재 및 소자 원천기술 개발, 윤선진
초록
© The Royal Society of Chemistry 2017. 2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS2-metal contacts decreases with the thickness of MoS2. We obtained a Schottky barrier height as low as about 70 meV when MoS2 is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS2.
KSP 제안 키워드
2D semiconductors, Contact resistance(73.40.Cg), Field-effect transistors(FETs), Optimal choice, Schottky barrier height, Schottky barriers(SBs), device performance, layer thickness, metal contact, thickness dependent, transition-metal dichalcogenides(TMDCs)