상세정보
학술지
Photoluminescence of Sulfur-incorporated CIGS Solar Cells through Postannealing
- 발행일
- 201708
- 출처
- Journal of Luminescence, v.188, pp.595-599
- ISSN
- 0022-2313
- 출판사
- Elsevier
- 협약과제
- 16PB2200, 초경량 유연 CIGS 박막 모듈 공정장비 상용화 기술개발, 정용덕
- 초록
- The photoluminescence (PL) of Cu(In,Ga)Se2 solar cell with sputtered Zn(O,S) buffer layers annealed at various temperatures were measured. As the annealing temperature increased, the peak positions of PL spectra shifted to higher energies. The broad PL spectra were separated two or three emissions, which are suggested to be mostly to donor-acceptor pair transitions with an acceptor due to copper vacancy and donors due to selenium vacancy or IIICu antisite. The changes of PL spectra were discussed from the view of the diffusion of elements, especially sulfur from buffer to absorber during the post-annealing process.
- KSP 제안 키워드
- Annealing temperature, Buffer layer, CIGS solar cell, Donor-acceptor pair(DAP), PL spectra, Post-annealing process, copper vacancy