ETRI-Knowledge Sharing Plaform



논문 검색
구분 SCI
연도 ~ 키워드


학술대회 High-Density Plasma Sputtered InZnSnO Thin-Film Transistors Fabricated by Back Channel Etching Method on Flexible Polyimide Substrate
Cited 5 time in scopus Download 2 time Share share facebook twitter linkedin kakaostory
조성행, 김희옥, 박은숙, 권오상, 양종헌, 황치선, 이정락, 도재철, 박완우, 노용석
Society for Information Display (SID) International Symposium 2017, pp.1262-1264
15PB1900, 폭 1500mm 플렉서블 기판에 산화물 박막 트랜지스터 증착을 위한 스퍼터 장비 실용화 기술 개발, 조성행
We demonstrate the fabrication of high performance InZnSnO thin-film transistors (TFT) with the field-effect mobility of 25 cm2 /Vs on about 10 um-thin polyimide substrate. Back-channel etch (BCE) process in the bottom gate configuration is employed for easy implementation of devices with shorter channel length and smaller parasitic capacitance and cost-effective fabrication compared with devices with etch-stop layer (ESL). For highly uniform electrical characteristics with high field-effect mobility, InZnSnO are deposited by high density plasma (HDP) sputtering which is assisted by microwave in order to enable the thin-film more densified compared with conventional sputtering method. The combination of HDP sputtering method for oxide deposition and BCE process provides highly uniform electrical characteristics of TFTs with high mobility and cost-effective method for their fabrication in large area flexible substrate.
KSP 제안 키워드
Bottom gate, Channel Length, Cost-effective fabrication, Etch-stop, Etching method, Flexible substrate, High Mobility, High density plasma, High performance, Oxide deposition, Parasitic Capacitance