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Conference Paper 화합물 반도체 CIGS 박막태양전지 제작 및 특성 평가
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Authors
김제하, 조대형, 변태준, 정용덕, 박래만, 김은아, 이규석, 오수영
Issue Date
2010-06
Citation
대한전자공학회 종합 학술 대회 (하계) 2010, pp.1992-1995
Publisher
대한전자공학회
Language
Korean
Type
Conference Paper
Abstract
We developed processes of co-evaporation and precursor-reaction for high quality CuIn,GaSe₂(CIGS) and characterized their structural properties using various techniques such as SEM, XRD, XRF, and Auger depth profiling. In addition, we used a basic fabrication process for CIGS photovoltaic devices and evaluated their J-V characteristics. For the cells of 0.47 ㎠, the conversion efficiency of 15.54% and 9.7% was obtained for co-evaporated and precursor-reaction prepared CIGS cells, respectively.
KSP Keywords
Auger depth profiling, Conversion efficiency(C.E.), Depth profiling(DP), Fabrication process, J-V characteristics, co-evaporated, co-evaporation, photovoltaic devices, structural properties