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Conference Paper
화합물 반도체 CIGS 박막태양전지 제작 및 특성 평가
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- Issue Date
- 2010-06
- Citation
- 대한전자공학회 종합 학술 대회 (하계) 2010, pp.1992-1995
- Publisher
- 대한전자공학회
- Language
- Korean
- Type
- Conference Paper
- Abstract
- We developed processes of co-evaporation and precursor-reaction for high quality CuIn,GaSe₂(CIGS) and characterized their structural properties using various techniques such as SEM, XRD, XRF, and Auger depth profiling. In addition, we used a basic fabrication process for CIGS photovoltaic devices and evaluated their J-V characteristics. For the cells of 0.47 ㎠, the conversion efficiency of 15.54% and 9.7% was obtained for co-evaporated and precursor-reaction prepared CIGS cells, respectively.
- KSP Keywords
- Auger depth profiling, Conversion efficiency(C.E.), Depth profiling(DP), Fabrication process, J-V characteristics, co-evaporated, co-evaporation, photovoltaic devices, structural properties