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Journal Article
Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters
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- Authors
- Han Sol Lee, Kyunghee Choi, Jin Sung Kim, Sanghyuck Yu, Kyeong Rok Ko, Seongil Im
- Issue Date
- 2017-05
- Citation
- ACS Applied Materials & Interfaces, v.9, no.18, pp.15592-15598
- ISSN
- 1944-8244
- Publisher
- American Chemical Society(ACS)
- Language
- English
- Type
- Journal Article
- Abstract
- We report the fabrication of hybrid PN junction diode and complementary (CMOS) inverters, where 2D p-type MoTe2 and n-type thin film InGaZnO (IGZO) are coupled for each device process. IGZO thin film was initially patterned by conventional photolithography either for n-type material in a PN diode or for n-channel of top-gate field-effect transistors (FET) in CMOS inverter. The hybrid PN junction diode shows a good ideality factor of 1.57 and quite a high ON/OFF rectification ratio of ~3 × 104. Under photons, our hybrid PN diode appeared somewhat stable only responding to high-energy photons of blue and ultraviolet. Our 2D nanosheet-oxide film hybrid CMOS inverter exhibits voltage gains as high as ~40 at 5 V, low power consumption less than around a few nW at 1 V, and ~200 μs switching dynamics.
- KSP Keywords
- 2D nanosheets, CMOS Inverter, Field Effect Transistor(FET), Film materials, High energy, Hybrid CMOS, IGZO thin film, Low Power consumption, Oxide film, PN diode, PN junction diode