We report the fabrication of hybrid PN junction diode and complementary (CMOS) inverters, where 2D p-type MoTe2 and n-type thin film InGaZnO (IGZO) are coupled for each device process. IGZO thin film was initially patterned by conventional photolithography either for n-type material in a PN diode or for n-channel of top-gate field-effect transistors (FET) in CMOS inverter. The hybrid PN junction diode shows a good ideality factor of 1.57 and quite a high ON/OFF rectification ratio of ~3 × 104. Under photons, our hybrid PN diode appeared somewhat stable only responding to high-energy photons of blue and ultraviolet. Our 2D nanosheet-oxide film hybrid CMOS inverter exhibits voltage gains as high as ~40 at 5 V, low power consumption less than around a few nW at 1 V, and ~200 μs switching dynamics.
KSP Keywords
2D nanosheets, CMOS Inverter, Field Effect Transistor(FET), Film materials, High energy, Hybrid CMOS, IGZO thin film, Low Power consumption, Oxide film, PN diode, PN junction diode
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