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Journal Article
Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure
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- Authors
- Hyun-Soo Lee, Dong Yun Jung, Youngrak Park, Hyun-Gyu Jang, Hyung-Seok Lee, Chi-Hoon Jun, Junbo Park, Jae Kyoung Mun, Sang-Ouk Ryu, Sang Choon Ko, Eun Soo Nam
- Issue Date
- 2017-06
- Citation
- Journal of Semiconductor Technology and Science, v.17, no.3, pp.354-362
- ISSN
- 1598-1657
- Publisher
- 대한전자공학회 (IEIE)
- Language
- English
- Type
- Journal Article
- Project Code
- 16MB1800, Development of High Efficiency GaN-based Key Components and Modules for Base and Mobile Stations, Jong-Won Lim
- Abstract
- We investigated the improvement in electrical characteristics of large AlGaN/GaN on Si Schottky barrier diode (SBD) induced by structural change to achieve a better trade-off between the forward and reverse performance to obtain high power conversion efficiency in PFC converter. Using an optimized dry etch condition for a large device, we fabricated three-types of SBD with 63 mm channel width: conventional, recessed, recessed dual-anode-metal SBD. The recessed dual-anode-metal SBD exhibited a very low turn-on voltage of 0.34 V, a high forward current of 1.63 A at 1.5 V, a leakage current of 114 μA at -15 V, a breakdown voltage of 794 V.
- KSP Keywords
- AlGaN/GaN-on-Si, Breakdown voltage(BDV), Channel Width, Conversion efficiency(C.E.), Dry etch, Forward and reverse, Forward current, High power conversion efficiency, Leakage current, PFC converter, Structural changes