상세정보
학술지
Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure
- 발행일
- 201706
- 출처
- Journal of Semiconductor Technology and Science, v.17 no.3, pp.354-362
- ISSN
- 1598-1657
- 출판사
- 대한전자공학회 (IEIE)
- 협약과제
- 16MB1800, 고효율 GaN 기반 기지국/단말기용 핵심부품 및 모듈 개발, 임종원
- 초록
- We investigated the improvement in electrical characteristics of large AlGaN/GaN on Si Schottky barrier diode (SBD) induced by structural change to achieve a better trade-off between the forward and reverse performance to obtain high power conversion efficiency in PFC converter. Using an optimized dry etch condition for a large device, we fabricated three-types of SBD with 63 mm channel width: conventional, recessed, recessed dual-anode-metal SBD. The recessed dual-anode-metal SBD exhibited a very low turn-on voltage of 0.34 V, a high forward current of 1.63 A at 1.5 V, a leakage current of 114 μA at -15 V, a breakdown voltage of 794 V.
- KSP 제안 키워드
- AlGaN/GaN-on-Si, Breakdown voltage(BDV), Channel Width, Conversion efficiency(C.E.), Dry etch, Forward and reverse, Forward current, High power conversion efficiency, Leakage current, PFC converter, Structural changes