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학술대회 X-Band GaN MMIC Power Amplifier for the SSPA of a SAR System
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저자
신동환, 염인복, 김동욱
발행일
201709
출처
International Symposium on Radio-Frequency Integration Technology (RFIT) 2017, pp.93-95
DOI
https://dx.doi.org/10.1109/RFIT.2017.8048093
협약과제
16JR1200, MMIC 기반 X-band GaN SSPA 상세설계 및 인증, 염인복
초록
An X-band monolithic microwave integrated circuit (MMIC) power amplifier for Synthetic Aperture Radar (SAR) systems has been implemented using a 0.25 μm AlGaN/GaN HEMT process on a SiC substrate. The MMIC power amplifier has an output power of 45 dBm (30 W) to 46 dBm (40 W) and a power-added efficiency of 38-44 % from 8.8 to 10.4 GHz with an associated power gain of 17 dB under the pulsed bias condition of a 10% duty cycle and 100 μs pulse width. The developed MMIC power amplifier will be applied to the solid-state power amplifier (sSPA) for future satellite SAR systems.
키워드
GaN HEMT, MMIC power amplifier, solid-state power amplifier (SSPA), X-band
KSP 제안 키워드
AlGaN/GaN HEMTs, Duty cycle(DC), MMIC power amplifier, Microwave monolithic integrated circuits(MMIC), Output power, Power added efficiency(PAE), Power gain, Pulsed bias, Satellite SAR, SiC substrate, Solid State Power Amplifier