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Journal Article Critical Side Channel Effects in Random Bit Generation with Multiple Semiconductor Lasers in a Polarization-based Quantum Key Distribution System
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Authors
Heasin Ko, Byung-Seok Choi, Joong-Seon Choe, Kap-Joong Kim, Jong-Hoi Kim, Chun Ju Youn
Issue Date
2017-08
Citation
Optics Express, v.25, no.17, pp.20045-20055
ISSN
1094-4087
Publisher
Optical Society of America(OSA)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1364/OE.25.020045
Abstract
Most polarization-based BB84 quantum key distribution (QKD) systems utilize multiple lasers to generate one of four polarization quantum states randomly. However, random bit generation with multiple lasers can potentially open critical side channels that significantly endanger the security of QKD systems. In this paper, we show unnoticed side channels of temporal disparity and intensity fluctuation, which possibly exist in the operation of multiple semiconductor laser diodes. Experimental results show that the side channels can enormously degrade security performance of QKD systems. An important system issue for the improvement of quantum bit error rate (QBER) related with laser driving condition is further addressed with experimental results.
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