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Journal Article
Control of PN-Junction Turn-on Voltage in 4H-SiC merged PiN Schottky Diode
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- Authors
- Junbo Park, Kun-Sik Park, Jong-il Won, Ki-hwan Kim, Sangmo Koo, Sang-gi Kim, Jae-Kyoung Mun
- Issue Date
- 2017-04
- Citation
- Applied Physics Letters, v.110, no.14, pp.1-5
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- We present numerical simulation results and experimental measurements that explain the physical mechanism behind the high critical voltage, Vcrit, required to turn on a pn junction in a merged PiN Schottky (MPS) diode. The 2D simulation of potential distribution within a unit MPS cell demonstrated that the potential gradient set by the Schottky junction raises the potential barrier formed at the pn junction, thereby increasing Vcrit. Based on this knowledge, we propose that changing the ratio of the Schottky contact and the p+ region area, as well as shallow p-doping of the Schottky interface, can be used to control the magnitude of Vcrit. We present simulation and measurement results that demonstrate the feasibility of our approach.
- KSP Keywords
- 2D Simulation, 4H-SiC, Critical Voltage, Experimental measurement, Merged Pin Schottky diode, Numerical simulation(Trnsys16), P-N junction, Physical mechanism, Potential barrier, Potential gradient, Region area