상세정보
학술지
Control of PN-Junction Turn-on Voltage in 4H-SiC merged PiN Schottky Diode
- 발행일
- 201704
- 출처
- Applied Physics Letters, v.110 no.14, pp.1-5
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 17ZB1400, SiC 기반 트렌치형 차세대 전력소자 핵심기술 개발, 김상기
- 초록
- We present numerical simulation results and experimental measurements that explain the physical mechanism behind the high critical voltage, Vcrit, required to turn on a pn junction in a merged PiN Schottky (MPS) diode. The 2D simulation of potential distribution within a unit MPS cell demonstrated that the potential gradient set by the Schottky junction raises the potential barrier formed at the pn junction, thereby increasing Vcrit. Based on this knowledge, we propose that changing the ratio of the Schottky contact and the p+ region area, as well as shallow p-doping of the Schottky interface, can be used to control the magnitude of Vcrit. We present simulation and measurement results that demonstrate the feasibility of our approach.
- KSP 제안 키워드
- 2D Simulation, 4H-SiC, Critical Voltage, Experimental measurements, Merged Pin Schottky diode, Numerical simulations, P-N junction, Physical mechanism, Potential barrier, Potential gradient, Region area