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학술지 Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
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윤형섭, 민병규, 이종민, 강동민, 안호균, 조규준, 도재원, 신민정, 정현욱, 김성일, 김해천, 임종원
Journal of the Korean Physical Society, v.71 no.6, pp.360-364
한국물리학회 (KPS)
17HB2400, 고효율 GaN 기반 기지국/단말기용 핵심부품 및 모듈 개발, 임종원
We fabricated a 0.18-μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC substrate fabricated by using two-step gate recessing which was composed of inductively coupled plasma (ICP) dry etching with a gas mixture of BCl3/Cl2 and wet chemical etching using the oxygen plasma treatment and HCl-based cleaning. The two-step gate recessing process exhibited an etch depth of 4.5 nm for the AlGaN layer and the clean surface of AlGaN layer at the AlGaN/gate metal contact region for the AlGaN/GaN HEMT structure. The recessed 0.18 μm × 200 μm AlGaN/GaN HEMT devices showed good DC characteristics, having a good Schottky diode ideality factor of 1.25, an extrinsic transconductance (gm) of 345 mS/mm, and a threshold voltage (Vth) of ?닋2.03 V. The recessed HEMT devices exhibited high RF performance, having a cut-off frequency (fT) of 48 GHz and a maximum oscillation frequency (fmax) of 130 GHz. These devices also showed minimum noise figure of 0.83 dB and associated gain of 12.2 dB at 10 GHz.
KSP 제안 키워드
10 Ghz, 3 V, 30 GHz, 5 nm, AlGaN/GaN HEMTs, Contact region, Cut-off frequency, DC Characteristics, Diode ideality factor, Etch depth, GaN HEMT devices