상세정보
학술지
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
- 발행일
- 201709
- 출처
- Journal of the Korean Physical Society, v.71 no.6, pp.360-364
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 협약과제
- 17HB2400, 고효율 GaN 기반 기지국/단말기용 핵심부품 및 모듈 개발, 임종원
- 초록
- We fabricated a 0.18-μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC substrate fabricated by using two-step gate recessing which was composed of inductively coupled plasma (ICP) dry etching with a gas mixture of BCl3/Cl2 and wet chemical etching using the oxygen plasma treatment and HCl-based cleaning. The two-step gate recessing process exhibited an etch depth of 4.5 nm for the AlGaN layer and the clean surface of AlGaN layer at the AlGaN/gate metal contact region for the AlGaN/GaN HEMT structure. The recessed 0.18 μm × 200 μm AlGaN/GaN HEMT devices showed good DC characteristics, having a good Schottky diode ideality factor of 1.25, an extrinsic transconductance (gm) of 345 mS/mm, and a threshold voltage (Vth) of ?닋2.03 V. The recessed HEMT devices exhibited high RF performance, having a cut-off frequency (fT) of 48 GHz and a maximum oscillation frequency (fmax) of 130 GHz. These devices also showed minimum noise figure of 0.83 dB and associated gain of 12.2 dB at 10 GHz.
- KSP 제안 키워드
- 10 Ghz, 3 V, 30 GHz, 5 nm, AlGaN/GaN HEMTs, Contact region, Cut-off frequency, DC Characteristics, Diode ideality factor, Etch depth, GaN HEMT devices