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Journal Article
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
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- Authors
- Hyung Sup Yoon, Byoung-Gue Min, Jong Min Lee, Dong Min Kang, Ho Kyun Ahn, Kyu-Jun Cho, Jae-Won Do, Min Jeong Shin, Hyun-Wook Jung, Sung Il Kim, Hae Cheon Kim, Jong Won Lim
- Issue Date
- 2017-09
- Citation
- Journal of the Korean Physical Society, v.71, no.6, pp.360-364
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- We fabricated a 0.18-μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC substrate fabricated by using two-step gate recessing which was composed of inductively coupled plasma (ICP) dry etching with a gas mixture of BCl3/Cl2 and wet chemical etching using the oxygen plasma treatment and HCl-based cleaning. The two-step gate recessing process exhibited an etch depth of 4.5 nm for the AlGaN layer and the clean surface of AlGaN layer at the AlGaN/gate metal contact region for the AlGaN/GaN HEMT structure. The recessed 0.18 μm × 200 μm AlGaN/GaN HEMT devices showed good DC characteristics, having a good Schottky diode ideality factor of 1.25, an extrinsic transconductance (gm) of 345 mS/mm, and a threshold voltage (Vth) of ?닋2.03 V. The recessed HEMT devices exhibited high RF performance, having a cut-off frequency (fT) of 48 GHz and a maximum oscillation frequency (fmax) of 130 GHz. These devices also showed minimum noise figure of 0.83 dB and associated gain of 12.2 dB at 10 GHz.
- KSP Keywords
- 10 Ghz, 3 V, 30 GHz, 5 nm, AlGaN/GaN HEMTs, Contact region, DC Characteristics, Diode ideality factor, Etch depth, GaN HEMT devices, Gas mixture