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학술대회 A Linear InGaP/GaAs HBT Power Amplifier for LTE B7 Applications
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저자
이희동, 김철호, 공선우, 장승현, 김광선, 김명돈, 박봉혁
발행일
201711
출처
International SoC Design Conference (ISOCC) 2017, pp.234-235
DOI
https://dx.doi.org/10.1109/ISOCC.2017.8368870
협약과제
17HF1700, 5G 이동통신용 밀리미터파(40GHz 이하) 빔포밍 부품 개발, 김광선
초록
This paper describes a highly linear InGaP/GaAs HBT power amplifier (PA) for LTE band 7 applications. By optimizing a bias point of the power stage and the driver stage and adjusting sweet-spot point of IMD3, the linearity of the PA can be improved. By the measurement results, the level of ACLR is below -46 dBc up to a 23.5 dBm output power. The fabricated InGaP/GaAs HBT PA has a gain of 29.5 dB, a P1dB of 31.5 dBm, and a PAE of 36% under 5 V supply voltage.
키워드
ACLR, Base station, Femtocell, HBT, Linearity, Power amplifier, Small cell
KSP 제안 키워드
Gaas hbt power amplifier, Highly linear, InGaP/GaAs HBT, LTE band, Output power, Power stage, Small cells, Supply voltage, base station(BS), bias point, measurement results