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Conference Paper
A Linear InGaP/GaAs HBT Power Amplifier for LTE B7 Applications
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- Authors
- Hui Dong Lee, Cheol Ho Kim, Sunwoo Kong, Seunghyun Jang, Kwang Seon Kim, Myung-Don Kim, Bonghyuk Park
- Issue Date
- 2017-11
- Citation
- International SoC Design Conference (ISOCC) 2017, pp.234-235
- Language
- English
- Type
- Conference Paper
- Project Code
- 17HF1700, Development on millimeter-wave beamforming IC for 5G mobile communication, Kim Kwang Seon
- Abstract
- This paper describes a highly linear InGaP/GaAs HBT power amplifier (PA) for LTE band 7 applications. By optimizing a bias point of the power stage and the driver stage and adjusting sweet-spot point of IMD3, the linearity of the PA can be improved. By the measurement results, the level of ACLR is below -46 dBc up to a 23.5 dBm output power. The fabricated InGaP/GaAs HBT PA has a gain of 29.5 dB, a P1dB of 31.5 dBm, and a PAE of 36% under 5 V supply voltage.