상세정보
학술대회
A Linear InGaP/GaAs HBT Power Amplifier for LTE B7 Applications
- 발행일
- 201711
- 출처
- International SoC Design Conference (ISOCC) 2017, pp.234-235
- 협약과제
- 17HF1700, 5G 이동통신용 밀리미터파(40GHz 이하) 빔포밍 부품 개발, 김광선
- 초록
- This paper describes a highly linear InGaP/GaAs HBT power amplifier (PA) for LTE band 7 applications. By optimizing a bias point of the power stage and the driver stage and adjusting sweet-spot point of IMD3, the linearity of the PA can be improved. By the measurement results, the level of ACLR is below -46 dBc up to a 23.5 dBm output power. The fabricated InGaP/GaAs HBT PA has a gain of 29.5 dB, a P1dB of 31.5 dBm, and a PAE of 36% under 5 V supply voltage.
- KSP 제안 키워드
- Gaas hbt power amplifier, Highly linear, InGaP/GaAs HBT, LTE band, Output power, Power stage, Supply voltage, bias point, measurement results, power amplifiers(PAs)